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JMTP170N06A PDF预览

JMTP170N06A

更新时间: 2024-11-22 14:55:47
品牌 Logo 应用领域
捷捷微 - JJM /
页数 文件大小 规格书
6页 339K
描述
中压 N-ch (40V ~ 400V)

JMTP170N06A 数据手册

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JMTP170N06A  
Description  
JMT N-channel Enhancement Mode Power MOSFET  
Features  
Application  
60V, 10A  
Load Switch  
RDS(ON) < 15.9mΩ @ VGS = 10V  
PWM Application  
RDS(ON) < 21.2mΩ @ VGS = 4.5V  
Advanced Trench Technology  
Excellent RDS(ON) and Low Gate Charge  
Lead Free  
Power Management  
100% UIS TESTED!  
SOP-8  
Marking and pin Assignment  
Schematic Diagram  
Package Marking and Ordering Information  
Reel  
(pcs)  
Per Carton  
(pcs)  
Device Marking  
Device  
Outline  
Package  
Reel Size  
170N06A  
JMTP170N06A  
TAPING  
SOP-8  
13”  
4000  
48000  
Absolute Maximum Ratings (TA=25unless otherwise specified)  
Symbol  
Parameter  
Drain-Source Voltage  
Max.  
Units  
VDSS  
VGSS  
60  
±20  
V
V
Gate-Source Voltage  
TA = 25  
10  
A
ID  
Continuous Drain Current  
Pulsed Drain Current note1  
TA = 100℃  
6.5  
A
IDM  
EAS  
PD  
40  
A
Single Pulsed Avalanche Energy note2  
64  
mJ  
W
Power Dissipation  
TA = 25℃  
1.64  
76  
RθJA  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
/W  
TJ, TSTG  
-55 to +150  
JieJie Microelectronics Co. , Ltd.  
Version :1.2  
- 1 -  

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