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JMTP240C03D PDF预览

JMTP240C03D

更新时间: 2024-11-19 14:55:15
品牌 Logo 应用领域
捷捷微 - JJM /
页数 文件大小 规格书
11页 660K
描述
低压 N-ch (≤ 30V )

JMTP240C03D 数据手册

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JMTP240C03D  
Description  
JMT N And P-Channel Enhancement Mode MOSFET  
Features  
Application  
N-Channel: 30V, 9A  
Battery Protection  
Load Switch  
RDS(ON) < 21mΩ @ VGS = 10V  
RDS(ON) < 33mΩ @ VGS = 4.5V  
P-Channel: -30V, -7A  
Power Management  
RDS(ON) < 35mΩ @ VGS = -10V  
RDS(ON) < 54mΩ @ VGS = -4.5V  
Excellent Gate Charge x RDS(ON) Product(FOM)  
Very Low On-resistance RDS(ON)  
Fast Switching Speed  
100% UIS TESTED!  
100% ΔVds TESTED!  
SOP-8(Dual)  
Marking and pin Assignment  
Schematic Diagram  
Package Marking and Ordering Information  
Reel  
(PCS)  
Per Carton  
(PCS)  
Device Marking  
Device  
OUTLINE  
Device Package  
Reel Size  
240C03D  
JMTP240C03D  
TAPING  
SOP-8  
13inch  
4000  
64000  
Absolute Maximum Ratings (TA=25unless otherwise specified)  
Symbol  
Parameter  
Drain-Source Voltage  
Max. N-Channel  
Max. P-Channel  
Units  
VDSS  
VGSS  
30  
±20  
9
-30  
±20  
-7  
V
V
Gate-Source Voltage  
TA = 25℃  
A
ID  
Continuous Drain Current  
TA = 100℃  
6
-4.6  
-28  
30  
A
IDM  
EAS  
Pulsed Drain Current note1  
Single Pulsed Avalanche Energy note2  
Power Dissipation  
36  
A
12  
mJ  
W
PD  
TA = 25℃  
2.7  
46.3  
2.5  
50  
RθJA  
Thermal Resistance, Junction to Ambient  
/W  
TJ, TSTG Operating and Storage Temperature Range  
-55 to +150  
JieJie Microelectronics CO. , Ltd  
Version :1.0  
- 1 -  

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