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JMTP260N03D PDF预览

JMTP260N03D

更新时间: 2024-11-19 14:54:27
品牌 Logo 应用领域
捷捷微 - JJM /
页数 文件大小 规格书
6页 686K
描述
低压 N-ch (≤ 30V )

JMTP260N03D 数据手册

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JMTP260N03D  
Description  
JMT Dual N-channel Enhancement Mode Power MOSFET  
Features  
Applications  
Load Switch  
30V, 8A  
PWM Application  
Power Management  
RDS(ON) < 23mΩ @ VGS = 10V  
RDS(ON) < 25mΩ @ VGS = 4.5V  
RDS(ON) < 31mΩ @ VGS = 2.5V  
100% UIS TESTED!  
100% ΔVds TESTED!  
Advanced Trench Technology  
Excellent RDS(ON) and Low Gate Charge  
Lead Free  
D1  
D2  
S2  
G1  
G2  
S1  
Schematic Diagram  
Marking and Pin Assignment  
SOP-8 (Dual)  
Package Marking and Ordering Information  
Per Carton  
(pcs)  
Device Marking  
Device  
Package  
Outline  
Reel Size Reel(pcs)  
13" 4000  
260N03D  
JMTP260N03D  
SOP-8  
TAPING  
48000  
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Value  
Symbol  
Units  
VDS  
VGS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
30  
±12  
8
V
V
TA = 25°C  
ID  
Continuous Drain Current  
A
TA = 100°C  
5
Pulsed Drain Current (1)  
Single Pulsed Avalanche Energy (2)  
IDM  
EAS  
32  
16  
1.8  
70  
A
mJ  
W
PD  
Power Dissipation  
TA = 25°C  
Thermal Resistance, Junction to Ambient(3)  
Junction & Storage Temperature Range  
RθJA  
°C/W  
°C  
TJ, TSTG  
-55 to 150  
JieJie Microelectronics Co., Ltd  
1
Version1.1  

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