Datasheet > JMTP170C04D

JMTP170C04D

更新时间： 2023-12-06 20:07:49

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
10页	506K
描述
中压 N-ch (40V ~ 400V)

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JMTP170C04D 数据手册

JMTP170C04D

Description

JMT N And P-Channel Enhancement Mode MOSFET

Features

Application

 N-Channel: 40V, 10A

 Battery Protection

 Load Switch

R_DS(ON)< 20mΩ @ V_GS= 10V

R_DS(ON)< 27mΩ @ V_GS= 4.5V

 P-Channel: -40V, -10A

 Power Management

R_DS(ON)< 44mΩ @ V_GS= -10V

R_DS(ON)< 62mΩ @ V_GS= -4.5V

 Excellent Gate Charge x R_DS(ON)Product(FOM)

 Very Low On-resistance R_DS(ON)

 Fast Switching Speed

100% UIS TESTED!

100% ΔVds TESTED!

SOP-8

Marking and pin Assignment

Schematic Diagram

Package Marking and Ordering Information

Reel

(PCS)

Per Carton

(PCS)

Device Marking

Device

OUTLINE

Device Package

Reel Size

170C04D

JMTP170C04D

TAPING

SOP-8

13inch

4000

48000

Absolute Maximum Ratings (T_A=25℃ unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Max. N-Channel

Max. P-Channel

Units

V_DSS

V_GSS

±20

-40

±20

-10

Gate-Source Voltage

T_A= 25℃

I_D

Continuous Drain Current

T_A= 100℃

6.5

-6.5

-40

I_DM

E_AS

Pulsed Drain Current ^note1

Single Pulsed Avalanche Energy ^note2

Power Dissipation

27.5

7.5

P_D

T_A= 25℃

3.4

36.8

R_θJA

Thermal Resistance, Junction to Ambient

16.7

℃/W

℃

T_J, T_STGOperating and Storage Temperature Range

-55 to +150

JieJie Microelectronics CO. , Ltd

Version :1.0

- 1 -

12 3 4 5 6 7...10

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