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JMTP110N06A PDF预览

JMTP110N06A

更新时间: 2024-11-19 14:51:07
品牌 Logo 应用领域
捷捷微 - JJM /
页数 文件大小 规格书
6页 582K
描述
中压 N-ch (40V ~ 400V)

JMTP110N06A 数据手册

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JMTP110N06A  
Description  
JMT N-channel Enhancement Mode Power MOSFET  
Features  
Application  
60V,12A  
Load Switch  
RDS(ON) <12mΩ @ VGS = 10V  
PWM Application  
Power management  
RDS(ON) <17mΩ @ VGS = 4.5V  
Advanced Trench Technology  
Provide Excellent RDS(ON) and Low Gate Charge  
Lead free product is acquired  
100% UIS TESTED!  
100% ΔVds TESTED!  
SOP-8 top view  
Marking and pin Assignment  
Schematic Diagram  
Package Marking and Ordering Information  
Reel  
(PCS)  
Per Carton  
(PCS)  
Device Marking  
Device  
OUTLINE  
Device Package  
Reel Size  
110N06A  
JMTP110N06A  
TAPING  
SOP-8  
13inch  
4000  
48000  
Absolute Maximum Ratings (TA=25unless otherwise specified)  
Symbol  
Parameter  
Drain-Source Voltage  
Max.  
Units  
VDSS  
VGSS  
60  
V
V
Gate-Source Voltage  
±20  
TA = 25  
12  
A
ID  
Continuous Drain Current  
Pulsed Drain Current note1  
TA = 100℃  
8
48  
A
IDM  
EAS  
PD  
A
Single Pulsed Avalanche Energy note2  
121  
mJ  
W
Power Dissipation  
TA = 25℃  
3.2  
RθJA  
Thermal Resistance, Junction to Ambient  
39  
/W  
TJ, TSTG Operating and Storage Temperature Range  
-55 to +150  
JieJie Microelectronics CO. , Ltd  
Version :1.1  
- 1 -  

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