Datasheet > JMTP160P03D

JMTP160P03D

更新时间： 2024-11-19 14:55:19

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	433K
描述
低压 P-ch (-30V ~ -5V)

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中文翻译

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数据手册

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JMTP160P03D 数据手册

JMTP160P03D

Description

JMT Dual P-channel Enhancement Mode Power MOSFET

Features

Application

 V_DS= -30V, I_D= -11A

 PWM Applications

 Load Switch

R_DS(ON)<17mΩ @ V_GS= -10V

R_DS(ON)< 27mΩ @ V_GS= -4.5V

 Advanced Trench Technology

 Excellent R_DS(ON)and Low Gate Charge

 Lead free product is acquired

 Power Management

100% UIS TESTED!

100% ΔVds TESTED!

SOP-8 top view

Marking and pin Assignment

Schematic Diagram

Package Marking and Ordering Information

Device

Reel

(PCS)

Per Carton

(PCS)

Device

OUTLINE

Device Package

Reel Size

Marking

160P03D

JMTP160P03D

TAPING

SOP-8

13inch

4000

48000

Absolute Maximum Ratings (T_A=25℃ unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Max.

Units

V_DSS

V_GSS

-30

±20

Gate-Source Voltage

T_A= 25℃

-11

I_D

Continuous Drain Current

Pulsed Drain Current ^note1

T_A= 100℃

-7

I_DM

E_AS

P_D

-44

Single Pulsed Avalanche Energy ^note2

Power Dissipation

T_A= 25℃

3.6

R_θJA

Thermal Resistance, Junction to Ambient

34.7

-55 to +150

℃/W

℃

T_J, T_STGOperating and Storage Temperature Range

JieJie Microelectronics CO. , Ltd

Version :1.1

- 1 -

12 3 4 5 6

中文翻译

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