Datasheet > JMTG100N06D

JMTG100N06D

更新时间： 2023-12-06 20:10:13

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	328K
描述
中压 N-ch (40V ~ 400V)

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JMTG100N06D 数据手册

JMTG100N06D

Electrical Characteristics (T_J=25℃ unless otherwise specified)

Symbol

Parameter

Test Condition

Min.

Typ.

Max. Units

Off Characteristic

V_(BR)DSS

I_DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Body Leakage Current

V_GS=0V, I_D=250μA

V_DS=60V, V_GS=0V,

V_DS=0V, V_GS= ±20V

1.0

μA

I_GSS

±100

On Characteristics

V_GS(th)Gate Threshold Voltage

V_DS=V_GS, I_D=250μA

V_GS=10V, I_D=20A

V_GS=4.5V, I_D=15A

1.0

1.7

9.5

2.5

Static Drain-Source on-Resistance

R_DS(on)

mΩ

note3

11.5

Dynamic Characteristics

C_iss

C_oss

C_rss

Q_g

Input Capacitance

4605

215

191

V_DS=25V, V_GS=0V,

f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

V_DS=30V, I_D=20A,

V_GS=10V

Q_gs

Q_gd

Gate-Source Charge

Gate-Drain(“Miller”) Charge

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-on Delay Time

Turn-on Rise Time

Turn-off Delay Time

Turn-off Fall Time

7.1

5.3

V_DS=30V, I_D=30A,

R_G=1.8Ω, V_GS=10V

27.2

6.2

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain to Source Diode Forward

I_S

200

1.2

Current

I_SM

V_SD

trr

Maximum Pulsed Drain to Source Diode Forward Current

Drain to Source Diode Forward

V_GS=0V, I_S=30A

Voltage

Body Diode Reverse Recovery Time

I_F=30A,

Body Diode Reverse Recovery

dI/dt=100A/μs

Qrr

Charge

Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

2. EAS condition : T_J=25℃, V_DD=30V, V_G=10V, L=0.5mH, Rg=25Ω, I_AS=20A

3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%

JieJie Microelectronics CO. , Ltd

Version :1.0

- 2 -

123 4 5 6

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