Datasheet > JANSG2N2221AUB

JANSG2N2221AUB

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
3页	64K
描述
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-4

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JANSG2N2221AUB 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

RADIATION HARDENED

NPN SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/255

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERISTICS

Symbol

Min.

Max.

Unit

Collector-Emitter Breakdown Voltage

I_C= 10mAdc

V_(BR)CEO

Vdc

Collector-Base Cutoff Current

V_CB= 75Vdc

µAdc

ηAdc

I_CBO

_CB= 60Vdc

Emitter-Base Cutoff Current

µAdc

ηAdc

V_EB= 6.0Vdc

V_EB= 4.0Vdc

I_EBO

Collector-Emitter Cutoff Current

V_CE= 50Vdc

I_CES

ηAdc

ON CHARACTERISTICS ⁽³⁾

Forward-Current Transfer Ratio

I_C= 0.1mAdc, V_CE= 10Vdc

2N2221A, L, UA, UB, UBC

2N2222A, L, UA, UB, UBC

I_C= 1.0mAdc, V_CE= 10Vdc

I_C= 10mAdc, V_CE= 10Vdc

2N2221A, L, UA, UB, UBC

2N2222A, L, UA, UB, UBC

150

325

2N2221A, L, UA, UB, UBC

2N2222A, L, UA, UB, UBC

100

h_FE

I_C= 150mAdc, V_CE= 10Vdc

2N2221A, L, UA, UB, UBC

2N2222A, L, UA, UB, UBC

100

120

300

I_C= 500mAdc, V_CE= 10Vdc

2N2221A, L, UA, UB, UBC

2N2222A, L, UA, UB, UBC

Collector-Emitter Saturation Voltage

I_C= 150mAdc, I_B= 15mAdc

I_C= 500mAdc, I_B= 50mAdc

0.3

1.0

V_CE(sat)

Vdc

Base-Emitter Voltage

I_C= 150mAdc, I_B= 15mAdc

I_C= 500mAdc, I_B= 50mAdc

0.6

1.2

2.0

V_BE(sat)

T4-LDS-0042 Rev. 2 (080857)

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