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JANSF2N5151L PDF预览

JANSF2N5151L

更新时间: 2024-11-29 14:51:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体管
页数 文件大小 规格书
4页 173K
描述
Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN

JANSF2N5151L 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:TO-5包装说明:CYLINDRICAL, O-MBCY-W3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.22最大集电极电流 (IC):2 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):20JEDEC-95代码:TO-5
JESD-30 代码:O-MBCY-W3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP最大功率耗散 (Abs):1 W
认证状态:Qualified参考标准:MIL-19500/545
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:BOTTOM晶体管元件材料:SILICON
标称过渡频率 (fT):60 MHz最大关闭时间(toff):1500 ns
最大开启时间(吨):500 nsBase Number Matches:1

JANSF2N5151L 数据手册

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TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
RADIATION HARDENED  
PNP POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/545  
DEVICES  
LEVELS  
JANSM – 3K Rads (Si)  
JANSD – 10K Rads (Si)  
JANSP – 30K Rads (Si)  
JANSL – 50K Rads (Si)  
JANSR – 100K Rads (Si)  
JANSF – 300K Rads (Si)  
2N5151  
2N5151L  
2N5151U3  
2N5153  
2N5153L  
2N5153U3  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
VCEO  
VCBO  
VEBO  
IC  
80  
100  
5.5  
2.0  
Vdc  
Vdc  
Vdc  
Adc  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Total Power Dissipation  
2N5151, 2N5153, L  
2N5151, 2N5153, L  
2N5151U3, 2N5153U3  
2N5151U3, 2N5153U3  
@ TA = +25°C (1)  
@ TC = +25°C (2)  
@ TA = +25°C (3)  
@ TC = +25°C (4)  
1.0  
10  
1.16  
100  
TO-5  
2N5151L, 2N5153L  
(See Figure 1)  
PT  
W
Operating & Storage Junction Temperature Range  
TJ , Tstg  
RθJC  
-65 to +200  
°C  
10  
1.75 (U3)  
Thermal Resistance, Junction-to Case  
°C/W  
Note:  
1) Derate linearly 5.7mW/°C for TA > +25°  
2) Derate linearly 66.7mW/°C for TA > +25°  
3) Derate linearly 6.63mW/°C for TA > +25°  
4) Derate linearly 571mW/°C for TA > +25°  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
TO-39 (TO-205AD)  
2N5151, 2N5153  
Parameters / Test Conditions  
OFF CHARACTERTICS  
Symbol  
Min.  
Max.  
Unit  
Collector-Emitter Breakdown Voltage  
IC = 100mAdc, IB = 0  
V(BR)CEO  
80  
Vdc  
Emitter-Base Cutoff Current  
V
EB = 4.0Vdc, IC = 0  
IEBO  
1.0  
1.0  
µAdc  
mAdc  
VEB = 5.5Vdc, IC = 0  
Collector-Emitter Cutoff Current  
V
CE = 60Vdc, VBE = 0  
ICES  
1.0  
1.0  
µAdc  
mAdc  
VCE = 100Vdc, VBE = 0  
U-3  
Collector-Base Cutoff Current  
VCE = 40Vdc, IB = 0  
ICEO  
50  
µAdc  
2N5151U3, 2N5153U3  
T4-LDS-0131 Rev. 1 (091476)  
Page 1 of 4  

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