Datasheet > JANSF2N7262U

JANSF2N7262U

更新时间： 2023-12-06 20:12:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	1154K
描述
Rad hard, 200V, 5.5A, single, N-channel MOSFET, R4 in an 18-pin LCC package - 18-pin LCC, 300 krad(Si) TID, QPL

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JANSF2N7262U 数据手册

IRHE7230 (JANSR2N7262U)

PD-90713H

Radiation Hardened Power MOSFET

Surface Mount (LCC-18)

200V, 5.5A, N-channel, Rad Hard HEXFET™ Technology

Features

Product Summary



Single event effect (SEE) hardened



BV_DSS: 200V

I_D: 5.5A

R_DS(on),max: 0.35

Q_G,max: 50nC

REF: MIL-PRF-19500/601

Low R_DS(on)

Low total gate charge

Simple drive requirements

Hermetically sealed



Surface Mount

Light weight

ESD rating: Class 1C per MIL-STD-750, Method 1020

Potential Applications

LCC-18



DC-DC converter

Motor drives



Product Validation

Qualified to JANS screening flow according to MIL-PRF-19500 for space applications

Description

IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications. This

technology has over a decade of proven performance and reliability in satellite applications. These devices have

been characterized for both Total Dose and Single Event Effects (SEE). The combination of low R_DS(on)and low

gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.

These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching

and temperature stability of electrical parameters.

Ordering Information

Table 1

Part number

IRHE7230

Ordering options

Package

Screening Level

COTS

TID Level

LCC-18

100 krad(Si)

300 krad(Si)

500 krad(Si)

JANSR2N7262U

IRHE3230

LCC-18

JANS

COTS

JANSF2N7262U

IRHE4230

JANS

COTS

JANSG2N7262U

JANS

Please read the Important Notice and Warnings at the end of this document

page 1 of 13

www.infineon.com/irhirel

2022-09-30

12 3 4 5 6 7...13

中文翻译

下载PDF

与JANSF2N7262U相关器件

型号	品牌	获取价格	描述	数据表
JANSF2N7268	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
JANSF2N7268U	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
JANSF2N7269	MICROSEMI	获取价格	Power Field-Effect Transistor, 26A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
JANSF2N7269	INFINEON	获取价格	Rad hard, 200V, 26A, single, N-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 300 kr
JANSF2N7269D	INFINEON	获取价格	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met
JANSF2N7269U	INFINEON	获取价格	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met
JANSF2N7269U	MICROSEMI	获取价格	Power Field-Effect Transistor, 26A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
JANSF2N7270	INFINEON	获取价格	Rad hard, 500V, 11A, single, N-channel MOSFET, R5 in a TO-254AA package - TO-254AA, 300 kr
JANSF2N7270U	INFINEON	获取价格	Rad hard, 500V, 11A, single, N-channel MOSFET, R4 in a SMD-1 package - SMD-1, 300 krad(Si)
JANSF2N7280	INFINEON	获取价格	Power Field-Effect Transistor, 14.4A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, M