型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANSF2N7268 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE |
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JANSF2N7268U | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) |
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JANSF2N7269 | MICROSEMI |
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Power Field-Effect Transistor, 26A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta |
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JANSF2N7269 | INFINEON |
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Rad hard, 200V, 26A, single, N-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 300 kr |
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JANSF2N7269D | INFINEON |
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Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met |
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JANSF2N7269U | INFINEON |
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Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met |
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JANSF2N7269U | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 26A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta |
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JANSF2N7270 | INFINEON |
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Rad hard, 500V, 11A, single, N-channel MOSFET, R5 in a TO-254AA package - TO-254AA, 300 kr |
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JANSF2N7270U | INFINEON |
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Rad hard, 500V, 11A, single, N-channel MOSFET, R4 in a SMD-1 package - SMD-1, 300 krad(Si) |
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JANSF2N7280 | INFINEON |
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Power Field-Effect Transistor, 14.4A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, M |
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