Datasheet > JANSF2N7261

JANSF2N7261

更新时间： 2024-10-02 20:27:43

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
12页	280K
描述
Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN

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JANSF2N7261 数据手册

PD - 90653E

IRHF7130

JANSR2N7261

100V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-39)

REF: MIL-PRF-19500/601

RAD Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHF7130

IRHF3130

IRHF4130

IRHF8130

100K Rads (Si)

300K Rads (Si)

600K Rads (Si)

0.18Ω

8.0A JANSR2N7261

8.0A JANSF2N7261

8.0A JANSG2N7261

8.0A JANSH2N7261

1000K Rads (Si) 0.18Ω

TO-39

International Rectifier’s RADHard HEXFET^®technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for bothTotal Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C Continuous Drain Current

8.0

= 12V, T = 100°C Continuous Drain Current

5.0

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

W/°C

0.20

±20

130

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

8.0

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

2.5

5.5

-55 to 150

^oC

Storage Temperature Range

STG

300 ( 0.063 in.(1.6mm) from case for 10s)

0.98 (Typical )

Lead Temperature

Weight

For footnotes refer to the last page

www.irf.com

08/08/03

12 3 4 5 6 7...12

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与JANSF2N7261相关器件

型号	品牌	获取价格	描述	数据表
JANSF2N72610U	INFINEON	获取价格	8A, 100V, 0.185ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC-18
JANSF2N7261U	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFCACE MOUNT(LCC-18)
JANSF2N7261U	MICROSEMI	获取价格	Power Field-Effect Transistor, 8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Meta
JANSF2N7262	INFINEON	获取价格	Rad hard, 200V, 5.5A, single, N-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 300 k
JANSF2N7262U	INFINEON	获取价格	Rad hard, 200V, 5.5A, single, N-channel MOSFET, R4 in an 18-pin LCC package - 18-pin LCC,
JANSF2N7268	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
JANSF2N7268U	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
JANSF2N7269	MICROSEMI	获取价格	Power Field-Effect Transistor, 26A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
JANSF2N7269	INFINEON	获取价格	Rad hard, 200V, 26A, single, N-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 300 kr
JANSF2N7269D	INFINEON	获取价格	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met

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