Datasheet > JANSF2N7269D

JANSF2N7269D

更新时间： 2024-02-20 23:00:49

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
12页	271K
描述
Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JANSF2N7269D 数据手册

PD - 90674C

IRHM7250

JANSR2N7269

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-254AA)

200V, N-CHANNEL

REF: MIL-PRF-19500/603

RAD Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHM7250

IRHM3250

IRHM4250

IRHM8250

100K Rads (Si) 0.10Ω

300K Rads (Si) 0.10Ω

600K Rads (Si) 0.10Ω

1000K Rads (Si) 0.10Ω

26A JANSR2N7269

26A JANSF2N7269

26A JANSG2N7269

26A JANSH2N7269

TO-254AA

International Rectifier’s RADHard HEXFET^®technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for bothTotal Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Eyelets

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

= 12V, T = 100°C Continuous Drain Current

104

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

150

W/°C

Linear Derating Factor

1.2

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➁

Avalanche Current ➀

±20

500

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➂

Operating Junction

V/ns

dv/dt

5.0

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063 in. (1.6mm) from case for 10s)

9.3 (Typical)

For footnotes refer to the last page

www.irf.com

10/11/00

12 3 4 5 6 7...12

中文翻译

下载PDF

与JANSF2N7269D相关器件

型号	品牌	获取价格	描述	数据表
JANSF2N7269U	INFINEON	获取价格	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met
JANSF2N7269U	MICROSEMI	获取价格	Power Field-Effect Transistor, 26A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
JANSF2N7270	INFINEON	获取价格	Rad hard, 500V, 11A, single, N-channel MOSFET, R5 in a TO-254AA package - TO-254AA, 300 kr
JANSF2N7270U	INFINEON	获取价格	Rad hard, 500V, 11A, single, N-channel MOSFET, R4 in a SMD-1 package - SMD-1, 300 krad(Si)
JANSF2N7280	INFINEON	获取价格	Power Field-Effect Transistor, 14.4A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, M
JANSF2N7281	INFINEON	获取价格	Power Field-Effect Transistor, 9.4A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
JANSF2N7380	INFINEON	获取价格	Rad hard, 100V, 14.4A, single, N-channel MOSFET, R4 in a TO-257AA package - TO-257AA, 300
JANSF2N7381	MICROSEMI	获取价格	Power Field-Effect Transistor, 9.4A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Me
JANSF2N7381	INFINEON	获取价格	Rad hard, 200V, 9.4A, single, N-channel MOSFET, R4 in a TO-257AA package - TO-257AA, 300 k
JANSF2N7382	INFINEON	获取价格	Rad hard, -100V, -1.1A, single, P-channel MOSFET, R4 in a TO-257AA package - TO-257AA, 300

与JANSF2N7269D相关文章

Pickering新高压舌簧继电器亮相汽车测试博览会
2024-08-26

17
采用MCU+MPU双处理器架构实现的创新应用设计探索
2024-08-23

34
解读L9904TR手册资料：产品概述、主要功能、电气参数
2024-08-20

35
芯片底部填充工艺：提升电子设备可靠性的关键步骤
2024-08-14

93

产品中心

服务支持

精选活动

关于我们

帮助中心

JANSF2N7269D

JANSF2N7269D 数据手册

与JANSF2N7269D相关器件

与JANSF2N7269D相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANSF2N7269D

JANSF2N7269D 数据手册

与JANSF2N7269D相关器件

与JANSF2N7269D相关文章

您还可以找

您在本页遇到什么问题？