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JANSF2N5154U3

更新时间： 2024-11-30 09:13:31
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
8页 216K
描述
Small Signal Bipolar Transistor, 2A I(C), NPN,

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中文翻译

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JANSF2N5154U3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：,
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.76最大集电极电流 (IC)：2 A
配置：Single最小直流电流增益 (hFE)：50
JESD-609代码：e4峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN最大功率耗散 (Abs)：100 W
认证状态：Qualified子类别：Other Transistors
表面贴装：YES端子面层：Gold (Au) - with Nickel (Ni) barrier
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

JANSF2N5154U3 数据手册

 浏览型号JANSF2N5154U3的Datasheet PDF文件第2页浏览型号JANSF2N5154U3的Datasheet PDF文件第3页浏览型号JANSF2N5154U3的Datasheet PDF文件第4页浏览型号JANSF2N5154U3的Datasheet PDF文件第5页浏览型号JANSF2N5154U3的Datasheet PDF文件第6页浏览型号JANSF2N5154U3的Datasheet PDF文件第7页 
JANS 2N5152U3 and JANS 2N5154U3  
ꢀ
Qualified Levels:  
RADIATION HARDENED  
JANSM, JANSD,  
JANSP, JANSL,  
JANSR, JANSF  
NPN POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/544  
DESCRIPTION  
These RHA level 2N5152U3 and 2N5154U3 silicon transistor devices are military Radiation  
Hardness Assurance qualified up to a JANSF level for high-reliability applications. Microsemi  
also offers numerous other products to meet higher and lower power voltage regulation  
applications.  
Important: For the latest information, visit our website http://www.microsemi.com.  
FEATURES  
U3 (SMD-0.5)  
Package  
ꢀ
ꢀ
JEDEC registered 2N5152 and 2N5154.  
JANS RHA qualifications are available per MIL-PRF-19500/544.  
Also available in:  
TO-5 Package  
(long-leaded)  
JANS_2N5152L &  
JANS_2N5154L  
APPLICATIONS / BENEFITS  
TO-39 Package  
(leaded)  
ꢀ
ꢀ
ꢀ
ꢀ
High frequency operation.  
Lightweight.  
JANS_2N5152 &  
JANS_2N5154  
High-speed power-switching applications.  
High-reliability applications.  
MAXIMUM RATINGS  
Parameters/Test Conditions  
Symbol  
TJ and TSTG  
RꢀJA  
Value  
-65 to +200  
Unit  
ºC  
ºC/W  
ºC/W  
mJ  
A
Junction and Storage Temperature  
Thermal Resistance Junction-to-Ambient  
Thermal Resistance Junction-to-Case  
Reverse Pulse Energy (1)  
175  
10  
15  
2
RꢀJC  
MSC – Lawrence  
6 Lake Street,  
Collector Current (dc)  
IC  
Collector to base voltage (static), emitter open  
Collector to emitter voltage (static) base open  
Emitter to base voltage (static) collector open  
Steady-State Power Dissipation @ TA = +25 ºC  
Steady-State Power Dissipation @ TC = +25 ºC  
VCBO  
VCEO  
VEBO  
PD  
100  
80  
5.5  
1
V
V
V
W
Lawrence, MA 01841  
Tel: 1-800-446-1158 or  
(978) 620-2600  
Fax: (978) 689-0803  
PD  
10  
W
MSC – Ireland  
Gort Road Business Park,  
Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044  
Fax: +353 (0) 65 6822298  
Notes: 1. This rating is based on the capability of the transistors to operate safely in the unclamped inductive load  
energy test circuit.  
Website:  
www.microsemi.com  
ꢀ
T4-LDS-0100-2 Rev. 2 (06/02/14)  
©2014 Microsemi Corporation  
Page 1 of 8  
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