Datasheet > JANSF2N5152L

JANSF2N5152L

更新时间： 2024-11-30 05:13:07

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
8页	773K
描述
Small Signal Bipolar Transistor, 2A I(C), NPN,

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技术参数
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JANSF2N5152L 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.52	最大集电极电流 (IC)：	2 A
配置：	Single	最小直流电流增益 (hFE)：	30
JESD-609代码：	e0	最高工作温度：	200 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	1 W
认证状态：	Qualified	子类别：	Other Transistors
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

JANSF2N5152L 数据手册

JANS 2N5152L and JANS 2N5154L

Qualified Levels:

RADIATION HARDENED

JANSM, JANSD,

JANSP, JANSL,

JANSR, JANSF

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/544

DESCRIPTION

These RHA level 2N5152L and 2N5154L silicon transistor devices are military Radiation

Hardness Assurance qualified up to a JANSF level for high-reliability applications. Microsemi

also offers numerous other products to meet higher and lower power voltage regulation

applications.

Important: For the latest information, visit our website http://www.microsemi.com.

FEATURES

•

JEDEC registered 2N5152 and 2N5154.

JANS RHA qualifications are available per MIL-PRF-19500/544.

TO-5 Package

Also available in:

TO-39 Package

(leaded)

APPLICATIONS / BENEFITS

JANS_2N5152 &

•

High frequency operation.

Lightweight.

JANS_2N5154

High-speed power-switching applications.

High-reliability applications.

U3 Package

(surface mount)

JANS_2N5152U3 &

JANS_2N5154U3

MAXIMUM RATINGS

Parameters/Test Conditions

Symbol

Value

Unit

ºC

Junction and Storage Temperature

Thermal Resistance Junction-to-Ambient

Thermal Resistance Junction-to-Case

Reverse Pulse Energy ⁽¹⁾

T_Jand T_STG

R_ӨJA

-65 to +200

175

ºC/W

R_ӨJC

MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841

Tel: 1-800-446-1158 or

(978) 620-2600

Collector Current (dc)

I_C

Collector to base voltage (static), emitter open

Collector to emitter voltage (static) base open

Emitter to base voltage (static) collector open

Steady-State Power Dissipation @ T_A= +25 ºC

Steady-State Power Dissipation @ T_C= +25 ºC

V_CBO

V_CEO

V_EBO

P_D

100

5.5

Fax: (978) 689-0803

P_D

MSC – Ireland

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Notes: 1. This rating is based on the capability of the transistors to operate safely in the unclamped inductive load

energy test circuit.

Website:

www.microsemi.com

T4-LDS-0100-1, Rev. 1 (120716)

Page 1 of 8

12 3 4 5 6 7 8

中文翻译

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与JANSF2N5152L相关器件

型号	品牌	获取价格	描述	数据表
JANSF2N5153	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD,
JANSF2N5154	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 2A I(C), NPN,
JANSF2N5154L	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 2A I(C), NPN,
JANSF2N5154U3	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 2A I(C), NPN,
JANSF2N7261	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Met
JANSF2N7261	MICROSEMI	获取价格	Power Field-Effect Transistor, 8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Meta
JANSF2N72610U	INFINEON	获取价格	8A, 100V, 0.185ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC-18
JANSF2N7261U	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFCACE MOUNT(LCC-18)
JANSF2N7261U	MICROSEMI	获取价格	Power Field-Effect Transistor, 8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Meta
JANSF2N7262	INFINEON	获取价格	Rad hard, 200V, 5.5A, single, N-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 300 k

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