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JANS2N2222AUB PDF预览

JANS2N2222AUB

更新时间: 2024-11-26 12:18:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管开关
页数 文件大小 规格书
6页 142K
描述
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)

JANS2N2222AUB 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:SMALL OUTLINE, R-CDSO-N3
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.17最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):30JESD-30 代码:R-CDSO-N3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.5 W
认证状态:Qualified参考标准:MIL-19500/255
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHz最大关闭时间(toff):300 ns
最大开启时间(吨):35 nsBase Number Matches:1

JANS2N2222AUB 数据手册

 浏览型号JANS2N2222AUB的Datasheet PDF文件第2页浏览型号JANS2N2222AUB的Datasheet PDF文件第3页浏览型号JANS2N2222AUB的Datasheet PDF文件第4页浏览型号JANS2N2222AUB的Datasheet PDF文件第5页浏览型号JANS2N2222AUB的Datasheet PDF文件第6页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
NPN SILICON SWITCHING TRANSISTOR  
Qualified per MIL-PRF-19500/255  
DEVICES  
LEVELS  
2N2221A  
2N2221AL  
2N2221AUA  
2N2221AUB  
2N2221AUBC *  
2N2222A  
2N2222AL  
2N2222AUA  
2N2222AUB  
2N2222AUBC *  
JAN  
JANTX  
JANTXV  
JANS  
* Available to JANS quality level only.  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
VCEO  
VCBO  
VEBO  
IC  
50  
75  
Vdc  
Vdc  
Vdc  
mAdc  
W
Collector-Base Voltage  
Emitter-Base Voltage  
6.0  
Collector Current  
800  
TO-18 (TO-206AA)  
2N2221A, 2N2222A  
Total Power Dissipation @ TA = +25°C  
Operating & Storage Junction Temperature Range  
PT  
0.5  
Top, Tstg  
-65 to +200  
°C  
THERMAL CHARACTERISTICS  
Parameters / Test Conditions  
Symbol  
Max.  
Unit  
Thermal Resistance, Junction-to-Ambient  
2N2221A, L  
2N2221AUA  
2N2221AUB, UBC  
2N2222A, L  
2N2222AUA  
2N2222AUB, UBC  
325  
210  
325  
°C/W  
RθJA  
4 PIN  
2N2221AUA, 2N2222AUA  
Note: Consult 19500/255 for thermal performance curves.  
1. Derate linearly 3.08mW/°C above TA > +37.5°C  
2. Derate linearly 4.76mW/°C above TA > +63.5°C  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
OFF CHARACTERTICS  
Symbol  
Min.  
Max.  
Unit  
Collector-Emitter Breakdown Voltage  
IC = 10mAdc  
V(BR)CEO  
ICBO  
50  
Vdc  
3 PIN  
2N2221AUB, 2N2222AUB  
2N2221AUBC, 2N2222AUBC  
(UBC = Ceramic Lid Version)  
Collector-Base Cutoff Current  
VCB = 75Vdc  
10  
10  
μAdc  
ηAdc  
V
CB = 60Vdc  
Emitter-Base Cutoff Current  
EB = 6.0Vdc  
V
IEBO  
10  
10  
μAdc  
ηAdc  
VEB = 4.0Vdc  
Collector-Emitter Cutoff Current  
VCE = 50Vdc  
ICES  
50  
ηAdc  
T4-LDS-0060 Rev. 2 (100247)  
Page 1 of 6  

JANS2N2222AUB 替代型号

型号 品牌 替代类型 描述 数据表
JAN2N2222AUB MICROSEMI

完全替代

Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC
JANTX2N2222AUB MICROSEMI

完全替代

Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC
JANTXV2N2222AUB MICROSEMI

类似代替

Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC

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