Datasheet > JANS2N2880

JANS2N2880

更新时间： 2024-09-12 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
20页	104K
描述
TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 5A I(C) \| TO-210AA

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JANS2N2880 数据手册

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 30 September 1999.

INCH-POUND

MIL-PRF-19500/315F

30 June 1999

SUPERSEDING

MIL-S-19500/315E

10 March 1992

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER

TYPES 2N2880, 2N3749, JAN, JANTX, JANTXV, AND JANS

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Four levels of product

assurance are provided for each device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. Type 2N2880, see figure 1 (TO – 59) and for type 2N3749, see figure 2 (TO – 59).

1.3 Maximum ratings.

CBO

CEO

EBO

and T

STG

= 25°C

= 100°C

V dc

110

V dc

A dc

0.5

°C

-65 to +200

1/ Derate linearly 11.4 mW/°C for T > 25°C.

2/ Derate linearly 300 mW/°C for T > 100°C.

1.4 Primary electrical characteristics at T = 25°C.

|h |

FE3

FE2

BE(sat)

CE(sat)

obo

Limits

qJC

= 5 V dc

= 2 V dc

= 10 V dc

= 1 A dc

= 10 V dc

= 5 A dc

= 1 A dc

= 100 mA dc

I = 0

f = 10 MHz

100 kHz £ f £ 1 MHz

V dc

°C/W

Min

Max

---

120

---

1.2

---

0.25

---

150

---

3.33

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH

43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this

document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...20

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