Datasheet > JANS2N2857UB

JANS2N2857UB

更新时间： 2024-09-12 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
17页	122K
描述
TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| 40MA I(C) \| LLCC

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JANS2N2857UB 数据手册

INCH-POUND

The documentation and process conversion measures

necessary to comply with this document shall be

completed by 8 May 2002.

MIL-PRF-19500/343F

8 February 2002

SUPERSEDING

MIL-PRF-19500/343E

28 November 2000

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON,

LOW POWER, TYPES 2N2857 AND 2N2857UB

JAN, JANTX, JANTXV, AND JANS, JANHC AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, low power, ultra-high

frequency transistors. Four levels of product assurance are provided for each device type and two levels for

unencapsulated chips as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figures 1 (TO-72) and 2 (surface mount) and figure 3 (JANHC, JANKC).

1.3 Maximum ratings.

P_T(1)

P_T(2)

I_C

V_CBOV_CEOV_EBOT_Jand T_STG

T_A= +25°C

T_C= +25°C

200

300

mA dc

V dc V dc V dc

30 15

°C

-65 to +200

(1) Derate linearly 1.14 mW/°C for T_A> +25°C.

(2) Derate linearly 1.71 mW/°C for T_C> +25°C.

1.4 Primary electrical characteristics at T_A= +25°C.

h_FE1

V_CE= 1 V dc

I_C= 3 mA dc

| h_fe

_CE= 6 V dc

I_C= 5 mA dc

f = 100 MHz

C_cb

V_CB= 10 V dc

I_E= 0

f = 100 kHz <

f< 1 MHz

G_pe

r_b' C_c

V_CE= 6 V dc

I_C= 1.5 mA dc

f = 450 MHz

R_g= 50 Ω

V_CE= 6 V dc

I_C= 1.5 mA dc

f = 450 MHz

V_CB= 6 V dc

I_E= 2 mA dc

f = 31.9 MHz

12.5

Min

Max

150

1.0

4.5

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O.

Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form

1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...17

中文翻译

下载PDF

与JANS2N2857UB相关器件

型号	品牌	获取价格	描述	数据表
JANS2N2880	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 5A I(C) \| TO-210AA
JANS2N2904	MICROSEMI	获取价格	PNP SWITCHING SILICON TRANSISTOR
JANS2N2904A	MICROSEMI	获取价格	PNP SWITCHING SILICON TRANSISTOR
JANS2N2904AL	MICROSEMI	获取价格	PNP SWITCHING SILICON TRANSISTOR
JANS2N2905	MICROSEMI	获取价格	PNP SWITCHING SILICON TRANSISTOR
JANS2N2905A	MICROSEMI	获取价格	PNP SWITCHING SILICON TRANSISTOR
JANS2N2905A/TR	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205A
JANS2N2905AL	MICROSEMI	获取价格	PNP SWITCHING SILICON TRANSISTOR
JANS2N2905AL/TR	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39,
JANS2N2906A	MICROSEMI	获取价格	PNP SMALL SIGNAL SILICON TRANSISTOR