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JANS2N2484UA PDF预览

JANS2N2484UA

更新时间: 2024-09-13 21:08:43
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
6页 331K
描述
Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, SURFACE MOUNT PACKAGE-4

JANS2N2484UA 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:SMALL OUTLINE, R-XDSO-N4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.49最大集电极电流 (IC):0.05 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):225JESD-30 代码:R-XDSO-N4
JESD-609代码:e0元件数量:1
端子数量:4最高工作温度:200 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.36 W
认证状态:Qualified参考标准:MIL-19500/376
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

JANS2N2484UA 数据手册

 浏览型号JANS2N2484UA的Datasheet PDF文件第2页浏览型号JANS2N2484UA的Datasheet PDF文件第3页浏览型号JANS2N2484UA的Datasheet PDF文件第4页浏览型号JANS2N2484UA的Datasheet PDF文件第5页浏览型号JANS2N2484UA的Datasheet PDF文件第6页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http://www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
NPN SILICON LOW POWER TRANSISTOR  
Qualified per MIL-PRF-19500/376  
DEVICES  
LEVELS  
2N2484  
2N2484UA  
2N2484UB  
2N2484UBC *  
JAN  
JANTX  
JANTXV  
JANS  
* Available to JANS quality level only.  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Collector-Emitter Voltage  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Value  
60  
Unit  
Vdc  
Collector-Base Voltage  
Emitter-Base Voltage  
60  
Vdc  
6.0  
50  
Vdc  
Collector Current  
mAdc  
(1)  
Total Power Dissipation @ TA = +25°C  
PT  
360  
mW  
°C  
TO-18 (TO-206AA)  
2N2484  
Operating & Storage Junction Temperature Range  
TJ, Tstg  
-65 to +200  
THERMAL CHARACTERISTICS  
Parameters / Test Conditions  
Symbol  
Value  
Unit  
Thermal Resistance, Ambient-to-Case  
2N2484  
2N2484UA  
2N2484UB, UBC  
325  
275  
350  
°C/W  
RθJA  
1. See 19500/376 for Thermal Performance Curves.  
2N2484UA  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
OFF CHARACTERTICS  
Symbol  
Min.  
Max.  
Unit  
Collector-Emitter Breakdown Voltage  
IC = 10mAdc  
V(BR)CEO  
ICES  
60  
Vdc  
Collector-Emitter Cutoff Current  
5.0  
ηAdc  
V
CE = 45Vdc  
Collector-Base Cutoff Current  
5.0  
10  
ηAdc  
μAdc  
2N2484UB, UBC  
(UBC = Ceramic Lid Version)  
V
V
CB = 45Vdc  
CB = 60Vdc  
ICBO  
Collector-Emitter Cutoff Current  
CE = 5.0Vdc  
V
ICEO  
2.0  
ηAdc  
T4-LDS-0058 Rev. 2 (110016)  
Page 1 of 6  

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