是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | TO-254AA |
包装说明: | FLANGE MOUNT, S-CSFM-P3 | 针数: | 3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.29.00.95 |
风险等级: | 5.25 | 其他特性: | HIGH RELIABILITY |
雪崩能效等级(Eas): | 750 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (Abs) (ID): | 12 A | 最大漏极电流 (ID): | 12 A |
最大漏源导通电阻: | 0.515 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-254AA | JESD-30 代码: | S-CSFM-P3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | SQUARE |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 150 W |
最大脉冲漏极电流 (IDM): | 48 A | 认证状态: | Qualified |
参考标准: | MIL-19500 | 子类别: | FET General Purpose Powers |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN2N72281N6036 | MICROSEMI |
获取价格 |
1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507 | |
JAN2N72281N6036A | MICROSEMI |
获取价格 |
1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507 | |
JAN2N72281N6036AE3 | MICROSEMI |
获取价格 |
1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507 | |
JAN2N72281N6036E3 | MICROSEMI |
获取价格 |
1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507 | |
JAN2N72281N6072 | MICROSEMI |
获取价格 |
1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507 | |
JAN2N72281N6072A | MICROSEMI |
获取价格 |
1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507 | |
JAN2N72281N6072AE3 | MICROSEMI |
获取价格 |
1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507 | |
JAN2N72281N6072E3 | MICROSEMI |
获取价格 |
1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507 | |
JAN2N7236 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 18A I(D) | TO-254AA | |
JAN2N7236U | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Met |