Datasheet > JAN2N3506AL

JAN2N3506AL

更新时间： 2024-11-28 23:59:59

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其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
14页	103K
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JAN2N3506AL 数据手册

The documentation and process conversion

measures necessary to comply with this

revision shall be completed by

INCH-POUND

MIL-PRF-19500/349E

28 August 2000

SUPERSEDING

28 November 2000.

MIL-PRF-19500/349D

12 December 1997

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING

TYPES 2N3506, 2N3506A, 2N3506L, 2N3506AL, 2N3507, 2N3507L, 2N3507A, 2N3507AL,

JAN, JANTX, JANTXV, AND JANS

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, switching transistors. Four

levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (similar to T0-39).

1.3 Maximum ratings. (1)

P_T(2)

P_T(3)

V_CBO

V_CEO

V_EBO

I_C

T_Jand

T_STG

R_qJA

T_A= +25°C

T_C= +25°C

2N3506

2N3507

2N3506

2N3507

2N3506A

V dc

2N3507A

2N3506A

2N3507A

V dc

5.0

A dc

3.0

°C

-65 to

+200

°C/W

1.0

5.0

175

(1) Electrical characteristics for "A", "AL", and "L" suffix devices are identical to non "L" suffix devices unless

otherwise noted.

(2) Derate linearly 5.71 mW/°C above T_A= +25°C.

(3) Derate linearly 28.6 mW/°C above T_C= +25°C.

1.4 Primary electrical characteristics. (1)

h_FE2(2)

h_FE4(2)

V_CE(sat)

|h_fe|

C_obo

t_on

t_off

Limits

V_CE= 2.0 V dc

I_C= 1.5 A dc

V_CE= 5.0 V dc

I_C= 3.0 A dc

I_C= 1.5 A dc

I_B= 150 mA dc

f = 20 Mhz

V_CE= 5 V dc

I_C= 100 mA dc

V_CB= 10 V dc

I_E= 0

100 kHz £ f

£ 1 MHz

I_C= 1.5 A dc

I_B= 150 mA dc

2N3506

2N3507

2N3506

2N3507

2N3506A 2N3507A 2N3506A 2N3507A

V dc

1.0

Min

Max

200

150

(1) Electrical characteristics for "A", "AL", and "L" suffix devices are identical to non "L" suffix devices unless

otherwise noted.

(2) Pulsed (see 4.5.1).

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving

this document should be addressed to: (Defense Supply Center, Columbus, ATTN: DSCC/VAC,

Post Office Box 3990, Columbus, OH 43216-5000), by using the Standardization Document Improvement Proposal

(DD Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...14

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与JAN2N3506AL相关器件

型号	品牌	获取价格	描述	数据表
JAN2N3506AU4	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC
JAN2N3506L	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 3A I(C) \| TO-5
JAN2N3507	VISHAY	获取价格	Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD,
JAN2N3507	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-205, S
JAN2N3507A	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HE
JAN2N3507AL	ETC	获取价格	BJT
JAN2N3507AU4	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC
JAN2N3507L	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 3A I(C) \| TO-5
JAN2N3584	MICROSEMI	获取价格	NPN HIGH POWER SILICON TRANSISTOR
JAN2N3585	MICROSEMI	获取价格	NPN HIGH POWER SILICON TRANSISTOR

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