Datasheet > JAN2N3636L

JAN2N3636L

更新时间： 2024-09-22 22:51:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体放大器晶体管开关
页数	文件大小	规格书
2页	61K
描述
PNP SILICON AMPLIFIER TRANSISTOR

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数据手册

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JAN2N3636L 数据手册

TECHNICAL DATA

PNP SILICON AMPLIFIER TRANSISTOR

Qualified per MIL-PRF-19500/ 357

Devices

Qualified Level

JAN

2N3634

2N3635

2N3636

2N3637

JANTX

2N3634L

2N3635L

2N3636L

2N3637L

JANTXV

JANS

MAXIMUM RATINGS

Ratings

2N3634* 2N3636*

2N3635* 2N3637*

Symbol

Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

140

175

Vdc

Adc

V_CEO

V_CBO

V_EBO

I_C

TO-39* (TO-205AD)

2N3634, 2N3635

2N3636, 2N3637

140

175

5.0

1.0

Total Power Dissipation

@ T_A= +25⁰C⁽¹⁾

@ T_C= +25⁰C⁽²⁾

1.0

5.0

⁰C

P_T

Operating & Storage Junction Temperature Range

-65 to +200

T_J_,T

stg

*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices

1) Derate linearly 5.71 mW/⁰C for T_A> +25⁰C

TO-5*

2N3634, 2N3635

2N3636, 2N3637

2) Derate linearly 28.6 mW/⁰C for T_C> +25⁰C

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T_A= 25⁰C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Current

I_C= 10 mAdc

140

175

Vdc

2N3634, 2N3635

2N3636, 2N3637

V_(BR)

CEO

Collector-Base Cutoff Current

V_CB= 100 Vdc

V_CB= 140 Vdc

hAdc

mAdc

I_CBO

100

2N3634, 2N3635

Emitter-Base Cutoff Current

V_EB= 3.0 Vdc

V_EB= 5.0 Vdc

hAdc

mAdc

I_EBO

Collector-Emitter Cutoff Current

V_CE= 100 Vdc

I_CEO

mAdc

6 Lake Street, Lawrence, MA 01841

120101

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

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与JAN2N3636L相关器件

型号	品牌	获取价格	描述	数据表
JAN2N3637	ONSEMI	获取价格	MIL-PRF-19500/357: 175 V, 1 A PNP Small Signal Transistor, TO-39 3-Lead, 100-BLKBX, Milita
JAN2N3637	MICROSEMI	获取价格	PNP SILICON AMPLIFIER TRANSISTOR
JAN2N3637L	MICROSEMI	获取价格	PNP SILICON AMPLIFIER TRANSISTOR
JAN2N3637L	ONSEMI	获取价格	MIL-PRF-19500/357: 175 V, 1 A PNP Small Signal Transistor, TO-5 3-Lead, 100-BLKBX, Militar
JAN2N3637UB	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC
JAN2N3700	MICROSEMI	获取价格	LOW POWER NPN SILICON TRANSISTOR
JAN2N3700	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-18,
JAN2N3700	ONSEMI	获取价格	MIL-PRF-19500/391: 80 V, 1 A NPN Small Signal Transistor
JAN2N3700S	MICROSEMI	获取价格	LOW POWER NPN SILICON TRANSISTOR
JAN2N3700UB	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 1A I(C)