是否无铅: | 含铅 | 生命周期: | Obsolete |
零件包装代码: | TO-5 | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.09 | Is Samacsys: | N |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 140 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 30 |
JEDEC-95代码: | TO-5 | JESD-30 代码: | O-MBCY-W3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 200 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 1 W | 认证状态: | Not Qualified |
参考标准: | MIL-19500/357H | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 650 ns | 最大开启时间(吨): | 200 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN2N3634UB | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC | |
JAN2N3635 | ONSEMI |
获取价格 |
MIL-PRF-19500/357: 140 V, 1 A PNP Small Signal Transistor, TO-39 3-Lead, 100-BLKBX, Milita | |
JAN2N3635 | MICROSEMI |
获取价格 |
PNP SILICON AMPLIFIER TRANSISTOR | |
JAN2N3635 | RAYTHEON |
获取价格 |
Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-39, | |
JAN2N3635L | MICROSEMI |
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PNP SILICON AMPLIFIER TRANSISTOR | |
JAN2N3635UB | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC | |
JAN2N3636 | MICROSEMI |
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PNP SILICON AMPLIFIER TRANSISTOR | |
JAN2N3636 | RAYTHEON |
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Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-39, | |
JAN2N3636L | MICROSEMI |
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PNP SILICON AMPLIFIER TRANSISTOR | |
JAN2N3637 | ONSEMI |
获取价格 |
MIL-PRF-19500/357: 175 V, 1 A PNP Small Signal Transistor, TO-39 3-Lead, 100-BLKBX, Milita |