生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 5.76 | 配置: | SINGLE |
JEDEC-95代码: | TO-18 | JESD-30 代码: | O-MBCY-W3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 参考标准: | MIL |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
JANTX2N3700 | ONSEMI |
功能相似 |
MIL-PRF-19500/391: 80 V, 1 A NPN Small Signal Transistor | |
JANTX2N3700 | MICROSEMI |
功能相似 |
LOW POWER NPN SILICON TRANSISTOR |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN2N3700S | MICROSEMI |
获取价格 |
LOW POWER NPN SILICON TRANSISTOR | |
JAN2N3700UB | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | |
JAN2N3715 | MICROSEMI |
获取价格 |
NPN HIGH POWER SILICON TRANSISTOR | |
JAN2N3716 | MICROSEMI |
获取价格 |
NPN HIGH POWER SILICON TRANSISTOR | |
JAN2N3735 | RAYTHEON |
获取价格 |
Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-39, | |
JAN2N3735L | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-5VAR | |
JAN2N3737 | RAYTHEON |
获取价格 |
Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-39, | |
JAN2N3737UB | ETC |
获取价格 |
BJT | |
JAN2N3739 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 250MA I(C) | TO-66 | |
JAN2N3740 | MICROSEMI |
获取价格 |
PNP POWER SILICON TRANSISTOR |