Datasheet > JAN2N3498L

JAN2N3498L

更新时间： 2024-11-08 22:51:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管开关
页数	文件大小	规格书
2页	63K
描述
NPN SILICON TRANSISTOR

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替代型号

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JAN2N3498L 数据手册

TECHNICAL DATA

NPN SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 366

Devices

Qualified Level

JAN

2N3498

2N3499

2N3500

2N3501

JANTX

2N3498L

2N3499L

2N3500L

2N3501L

JANTXV

JANS

MAXIMUM RATINGS

2N3498^*2N3500^*

Ratings

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Symbol 2N3499^*2N3501^*

Unit

Vdc

100

6.0

150

6.0

V_CEO

V_CBO

V_EBO

I_C

Vdc

TO-5*

500

300

mAdc

@ T_A= 25⁰C ⁽¹⁾

@ T_C= 25⁰C ⁽²⁾

1.0

5.0

⁰C

2N3498L, 2N3499L

2N3500L, 2N3501L

Total Power Dissipation

P_T

Operating & Storage Junction Temp. Range

-55 to +200

T_J_,T

stg

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

Thermal Resistance:

Junction-to-Case

qJC

⁰C/W

TO-39* (TO-205AD)

2N3498, 2N3499

Junction-to-Ambient

175

qJA

*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices

1) Derate linearly 5.71 W/⁰C for T_A> 25⁰C

2N3500, 2N3501

2) Derate linearly 28.6 W/⁰C for T_C> 25⁰C

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T_A= 25⁰C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I_C= 10 mAdc

100

150

Vdc

2N3498, 2N3499

2N3500, 2N3501

V_(BR)

CEO

Collector-Base Cutoff Current

V_CB= 50 Vdc

V_CB= 75 Vdc

V_CB= 100 Vdc

V_CB= 150 Vdc

hAdc

mAdc

2N3498, 2N3499

2N3500, 2N3501

2N3498, 2N3499

2N3500, 2N3501

I_CBO

Emitter-Base Cutoff Current

V_EB= 4.0 Vdc

V_EB= 6.0 Vdc

hAdc

mAdc

I_EBO

6 Lake Street, Lawrence, MA 01841

120101

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

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JAN2N3498L 替代型号

型号	品牌	替代类型	描述	数据表
JANS2N3498L	MICROSEMI	完全替代	NPN SILICON TRANSISTOR
JANS2N3498	MICROSEMI	类似代替	NPN SILICON TRANSISTOR
2N3498L	MICROSEMI	功能相似	NPN SILICON TRANSISTOR

与JAN2N3498L相关器件

型号	品牌	获取价格	描述	数据表
JAN2N3499	MICROSEMI	获取价格	NPN SILICON TRANSISTOR
JAN2N3499L	MICROSEMI	获取价格	NPN SILICON TRANSISTOR
JAN2N3499U4	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), NPN,
JAN2N3500	MICROSEMI	获取价格	NPN SILICON TRANSISTOR
JAN2N3500L	MICROSEMI	获取价格	NPN SILICON TRANSISTOR
JAN2N3501	MICROSEMI	获取价格	NPN SILICON TRANSISTOR
JAN2N3501L	MICROSEMI	获取价格	NPN SILICON TRANSISTOR
JAN2N3501U4	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.3A I(C), NPN,
JAN2N3501UB	MICROSEMI	获取价格	RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR
JAN2N3506	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-205, S