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JAN2N3499L PDF预览

JAN2N3499L

更新时间: 2024-11-28 22:51:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管
页数 文件大小 规格书
2页 63K
描述
NPN SILICON TRANSISTOR

JAN2N3499L 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Transferred零件包装代码:TO-5
包装说明:TO-5, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.27
外壳连接:COLLECTOR最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):20JEDEC-95代码:TO-5
JESD-30 代码:O-MBCY-W3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):1 W认证状态:Qualified
参考标准:MIL-19500/366子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):1150 ns
最大开启时间(吨):115 ns

JAN2N3499L 数据手册

 浏览型号JAN2N3499L的Datasheet PDF文件第2页 
TECHNICAL DATA  
NPN SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 366  
Devices  
Qualified Level  
JAN  
2N3498  
2N3499  
2N3500  
2N3501  
JANTX  
2N3498L  
2N3499L  
2N3500L  
2N3501L  
JANTXV  
JANS  
MAXIMUM RATINGS  
2N3498* 2N3500*  
Ratings  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Symbol 2N3499* 2N3501*  
Unit  
Vdc  
100  
100  
6.0  
150  
150  
6.0  
VCEO  
VCBO  
VEBO  
IC  
Vdc  
Vdc  
TO-5*  
500  
300  
mAdc  
@ TA = 250C (1)  
@ TC = 250C (2)  
1.0  
5.0  
W
W
0C  
2N3498L, 2N3499L  
2N3500L, 2N3501L  
Total Power Dissipation  
PT  
Operating & Storage Junction Temp. Range  
-55 to +200  
TJ, T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
Unit  
Thermal Resistance:  
Junction-to-Case  
35  
R
qJC  
0C/W  
TO-39* (TO-205AD)  
2N3498, 2N3499  
Junction-to-Ambient  
175  
R
qJA  
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices  
1) Derate linearly 5.71 W/0C for TA > 250C  
2N3500, 2N3501  
2) Derate linearly 28.6 W/0C for TC > 250C  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 10 mAdc  
100  
150  
Vdc  
2N3498, 2N3499  
2N3500, 2N3501  
V(BR)  
CEO  
Collector-Base Cutoff Current  
VCB = 50 Vdc  
VCB = 75 Vdc  
VCB = 100 Vdc  
VCB = 150 Vdc  
50  
50  
10  
10  
hAdc  
hAdc  
mAdc  
mAdc  
2N3498, 2N3499  
2N3500, 2N3501  
2N3498, 2N3499  
2N3500, 2N3501  
ICBO  
Emitter-Base Cutoff Current  
VEB = 4.0 Vdc  
VEB = 6.0 Vdc  
25  
10  
hAdc  
mAdc  
IEBO  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

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