Datasheet > JAN2N3440UA

JAN2N3440UA

更新时间： 2024-11-30 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
21页	138K
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BJT

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JAN2N3440UA 数据手册

INCH-POUND

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 8 October 2002.

MIL-PRF-19500/368F

8 July 2002

SUPERSEDING

MIL-PRF-19500/368E

24 August 2001

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER

TYPES: 2N3439, 2N3439L, 2N3439UA, 2N3440, 2N3440L AND 2N3440UA,

JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power, high voltage

transistors. Four levels of product assurance are provided for each encapsulated device types as specified in

MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.

* 1.2 Physical dimensions. See figure 1 (similar to TO-5 and TO-39), figure 2 (JANHCA and JANKCA (A versions)),

figure 3 (JANHCB and JANKCB (B versions)), and figure 4 (2N3439UA and 2N3440UA surface mount versions).

* 1.3 Maximum ratings. Unless otherwise specified, T_A= +25°C.

Types

and T

(1)

(2)

θJA

CBO

EBO

CEO

STG

= +25°C

V dc

450

V dc

350

A dc

1.0

°C

°C/W

2N3439, 2N3439L,

2N3439UA

0.8

5.0

-65 to +200

325

2N3440, 2N3440L

2N3440UA

0.8

5.0

300

250

1.0

325

(1) Derate linearly 5.7 mW/°C for T_A> +60°C.

(2) Derate linearly 28.6 mW/°C for T_C> +25°C.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC,

P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal

(DD Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...21

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与JAN2N3440UA相关器件

型号	品牌	获取价格	描述	数据表
JAN2N3441	MICROSEMI	获取价格	NPN POWER SILICON TRANSISTOR
JAN2N3442	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 140V V(BR)CEO \| 10A I(C) \| TO-3
JAN2N3467	MICROSEMI	获取价格	PNP SILICON SWITCHING TRANSISTOR
JAN2N3467L	MICROSEMI	获取价格	PNP SILICON SWITCHING TRANSISTOR
JAN2N3468	MICROSEMI	获取价格	PNP SILICON SWITCHING TRANSISTOR
JAN2N3468L	MICROSEMI	获取价格	PNP SILICON SWITCHING TRANSISTOR
JAN2N3485A	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-46,
JAN2N3486A	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-46,
JAN2N3498	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-39,
JAN2N3498	MICROSEMI	获取价格	NPN SILICON TRANSISTOR