5秒后页面跳转
JAN2N3468 PDF预览

JAN2N3468

更新时间: 2024-12-01 12:46:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体开关晶体管
页数 文件大小 规格书
2页 59K
描述
PNP SILICON SWITCHING TRANSISTOR

JAN2N3468 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:BCY
包装说明:CYLINDRICAL, O-MBCY-W3针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.24
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):25JEDEC-95代码:TO-205AD
JESD-30 代码:O-MBCY-W3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Qualified
参考标准:MIL-19500/348E表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHz最大关闭时间(toff):90 ns
最大开启时间(吨):40 nsBase Number Matches:1

JAN2N3468 数据手册

 浏览型号JAN2N3468的Datasheet PDF文件第2页 
TECHNICAL DATA  
PNP SILICON SWITCHING TRANSISTOR  
Qualified per MIL-PRF-19500/ 348  
Devices  
Qualified Level  
JAN  
JANTX  
JANTXV  
2N3467  
2N3467L  
2N3468  
2N3468L  
MAXIMUM RATINGS  
2N3467  
2N3467L 2N3468L  
2N3468  
Ratings  
Symbol  
Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
40  
50  
Vdc  
Vdc  
Vdc  
Adc  
VCEO  
VCBO  
VEBO  
IC  
TO-39* (TO-205AD)  
2N3467, 2N3468  
40  
50  
5.0  
1.0  
Total Power Dissipation  
@ TA = +250C(1)  
@ TC = +250C(2)  
1.0  
5.0  
W
W
0C  
PT  
Operating & Storage Junction Temperature Range  
-55 to +175  
Top, T  
stg  
TO-5*  
2N3467L, 2N3468L  
1) Derate linearly 5.71 mW/0C for TA > +250C  
2) Derate linearly 28.6 mW/0C for TC > +250C  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Current  
IC = 10 mAdc  
40  
50  
Vdc  
Vdc  
Vdc  
2N3467, L  
2N3468, L  
V(BR)  
CBO  
Emitter-Base Breakdown Current  
IE = 10 mAdc  
Collector-Emitter Breakdown Current  
IC = 10 mAdc  
V(BR)  
EBO  
5.0  
40  
50  
2N3467, L  
2N3468, L  
V(BR)  
CEO  
Collector-Base Cutoff Current  
VCB = 30 Vdc  
Collector-Emitter Cutoff Current  
VEB = 3.0 Vdc, VCE = 30  
ICBO  
ICEX  
hAdc  
100  
100  
nAdc  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

与JAN2N3468相关器件

型号 品牌 获取价格 描述 数据表
JAN2N3468L MICROSEMI

获取价格

PNP SILICON SWITCHING TRANSISTOR
JAN2N3485A RAYTHEON

获取价格

Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-46,
JAN2N3486A RAYTHEON

获取价格

Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-46,
JAN2N3498 RAYTHEON

获取价格

Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-39,
JAN2N3498 MICROSEMI

获取价格

NPN SILICON TRANSISTOR
JAN2N3498L MICROSEMI

获取价格

NPN SILICON TRANSISTOR
JAN2N3499 MICROSEMI

获取价格

NPN SILICON TRANSISTOR
JAN2N3499L MICROSEMI

获取价格

NPN SILICON TRANSISTOR
JAN2N3499U4 MICROSEMI

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), NPN,
JAN2N3500 MICROSEMI

获取价格

NPN SILICON TRANSISTOR