Datasheet > JAN2N3421S

JAN2N3421S

更新时间： 2024-11-01 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
21页	134K
描述
TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| TO-5

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JAN2N3421S 数据手册

INCH-POUND

The documentation and process conversion

measures necessary to comply with this

revision shall be completed by 25 August 2001.

MIL-PRF-19500/393D

25 May 2001

SUPERSEDING

MIL-PRF-19500/393C

20 April 2000

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON POWER

TYPES 2N3418, 2N3418S, 2N3419, 2N3419S, 2N3420, 2N3420S, 2N3421, 2N3421S

JAN, JANTX, JANTXV, JANS, JANHC, and JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1. Scope. This specification covers the performance requirements for NPN, silicon, transistors for use in

medium power switching applications. Four levels of product assurance are provided for each device type, and two

levels of product assurance for die (element evaluation) are provided, as specified in MIL-PRF-19500.

1.2. Physical dimensions. See figure 1 (similar to TO-5 for long leaded devices and TO-39 for short leaded

devices), figure 2, and figure 3 for JANHC and JANKC (die) dimensions.

1.3. Maximum ratings.

Type

and T

CBO

CEO

EBO

STG

= +25°C

(1)

= +100°C

(3)

(2)

V dc

A dc

°C

2N3418, 2N3418S

2N3419, 2N3419S

2N3420, 2N3420S

2N3421, 2N3421S

1.0

-65 to +200

1.0

125

1.0

125

(1) Derate linearly at 5.72 mW/°C above T_A> +25°C.

(2) Derate linearly at 150 mW/°C above T_C> +100°C.

(3) This value applies for t_p≤ 1 ms, duty cycle ≤ 50 percent.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC, Post

Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD

Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...21

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与JAN2N3421S相关器件

型号	品牌	获取价格	描述	数据表
JAN2N3421U4	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC
JAN2N3439	MICROSEMI	获取价格	This family of high-frequency, epitaxial planar transistors feature low saturation voltage
JAN2N3439E3	MICROSEMI	获取价格	NPN LOW POWER SILICON TRANSISTOR
JAN2N3439E4	MICROSEMI	获取价格	NPN LOW POWER SILICON TRANSISTOR
JAN2N3439L	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 350V V(BR)CEO \| 1A I(C) \| TO-5
JAN2N3439UA	ETC	获取价格	BJT
JAN2N3440	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 250V V(BR)CEO \| 1A I(C) \| TO-5
JAN2N3440L	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 250V V(BR)CEO \| 1A I(C) \| TO-5
JAN2N3440UA	ETC	获取价格	BJT
JAN2N3441	MICROSEMI	获取价格	NPN POWER SILICON TRANSISTOR