Datasheet > IXTZ550N055T2

IXTZ550N055T2

更新时间： 2024-11-18 21:09:35

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
7页	206K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IXTZ550N055T2 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.75
Base Number Matches：	1

IXTZ550N055T2 数据手册

Advance Technical Information

TrenchT2^TMGigaMOS^TM

Power MOSFET

V_DSS= 55V

I_D25= 550A

R_DS(on)≤ 1.0mΩ

IXTZ550N055T2

(Electrically Isolated Tab)

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

DE475

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 175°C

T_J= 25°C to 175°C, R_GS= 1MΩ

V_DGR

V_GSS

V_GSM

Continuous

Transient

±20

±30

Isolated Tab

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

550

G = Gate

S = Source

D = Drain

1650

I_A

T_C= 25°C

200

E_AS

Features

P_D

T_C= 25°C

600

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +175

°C

^zSilicon Chip on Direct-Copper Bond

(DCB) Substrate

^zIsolated Substrate

V_ISOL

50/60 Hz, RMS

I_ISOL≤ 1mA

t = 1 minute

t = 1 second

2500

3000

- Excellent Thermal Transfer

- Increased Temperature and Power

Cycling Capability

- High Isolation Voltage (2500V~)

^z175°C Operating Temperature

^zVery High Current Handling

Capability

^zFast Intrinsic Diode

^zAvalanche Rated

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

V_ISOL

50/60 Hz, 1 Minute

Mounting Force

2500

F_C

20..120 / 4.5..27

N/lb.

Weight

Very Low R_DS(on)

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 250μA

V_GS= ±20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

Applications

2.0

4.0

^zDC-DC Converters and Off-Line UPS

^zPrimary-Side Switch

^zHigh Speed Power Switching

Applications

±200 nA

I_DSS

10 μA

1.5 mA

T_J= 150°C

R_DS(on)

V_GS= 10V, I_D= 100A, Note 1

1.0 mΩ

DS100243(02/10)

12 3 4 5 6 7

中文翻译

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