Datasheet > IXUV170N075S

IXUV170N075S

更新时间： 2024-11-19 14:56:47

品牌	Logo	应用领域
力特 - LITTELFUSE		栅
页数	文件大小	规格书
3页	178K
描述
沟槽栅功率MOSFET适用于低电压/高电流应用，所需的RDS(on)极低，因此确保了非常低的功率耗损。再结合广泛的工作结温范围（从-40 °C到175 °C），这些产品非常适合汽车应用以及其他处

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IXUV170N075S 数据手册

Advance Technical Information

Trench^TM

Power MOSFET

V_DSS= 75V

I_D25= 170A

R_DS(on) 6.5m

IXUV170N075

IXUV170N075S

N-Channel Enhancement Mode

PLUS220 (IXUV)

D (Tab)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 175°C

PLUS220SMD (IXUV_S)

V_DGR

T_J= 25C to 175C, R_GS= 1M

V_GSS

V_GSM

Continuous

Transient

± 20

± 30

I_D25

I_LRMS

I_DM

T_C= 25°C

Lead Current Limit, RMS

T_C= 25°C, Pulse Width Limited by T_JM

170

120

300

D (Tab)

G = Gate

S = Source

= Drain

P_D

T_C= 25°C

310

Tab = Drain

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +175

°C

Features

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C



International Standard Packages

Fast Intrinsic Rectifier

Low R_DS(ON)and Q_G



F_C

Mounting force (PLUS220)

11..65 / 2.5..14.6

N/lb

Low Package Inductance

Weight

Advantages



High Power Density

Easy to Mount

Space Savings



Symbol

Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min. Typ.

Max.

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 1mA

V_GS= ±20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V



Automotive 42V & 12V Systems

- Electronic Switches to Replace

Relays and Fuses

- Choppers to Replace Series Dropping

Resistors used for Motors, Heaters, etc.

- Inverters for AC Drives, e.g. Starter

Generator

2.0

4.0

± 200 nA

A

I_DSS

T_J= 150°C

500A

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

6.5 m

- DC - DC Inverters

Power Supplies



- DC - DC Inverters

- Solar Inverters

Battery Powered Systems



- Choppers or Inverters for Motor

Control in Hand Tools

- Battery Chargers

DS98944(10/02)

12 3

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