5秒后页面跳转
IXUC100N055 PDF预览

IXUC100N055

更新时间: 2024-11-18 17:01:27
品牌 Logo 应用领域
IXYS 开关晶体管
页数 文件大小 规格书
2页 541K
描述
Power Field-Effect Transistor, 100A I(D), 55V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA, ISOPLUS 220, TO-273, 3 PIN

IXUC100N055 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Lifetime Buy零件包装代码:TO-273AA
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.7雪崩能效等级(Eas):500 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (ID):100 A
最大漏源导通电阻:0.0077 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-273AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:35晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXUC100N055 数据手册

 浏览型号IXUC100N055的Datasheet PDF文件第2页 
ADVANCE TECHNICAL INFORMATION  
Trench Power MOSFET IXUC100N055  
ISOPLUS220TM  
VDSS = 55 V  
ID25 = 100 A  
RDS(on)= 7.7 mΩ  
Electrically Isolated Back Surface  
ISOPLUS 220TM  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VGS  
TJ = 25°C to 150°C  
55  
20  
V
V
G
D
Continuous  
S
Isolated back surface*  
D = Drain,  
ID25  
ID90  
IS25  
IS90  
ID(RMS)  
EAS  
TC = 25°C; Note 1  
TC = 90°C, Note 1  
100  
80  
A
A
G = Gate,  
S = Source  
TC = 25°C; Note 1, 2  
TC = 90°C, Note 1, 2  
100  
70  
A
A
* Patent pending  
Features  
Package lead current limit  
TC = 25°C  
50  
A
mJ  
W
Silicon chip on Direct-Copper-Bond  
substrate  
50  
15
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
Trench MOSFET  
PD  
TC = 25°C  
TJ  
-5+175  
1
°C  
°C  
°C  
TJM  
Tstg  
- very low RDS(on)  
- fast switching  
-... +125  
- usable intrinsic reverse diode  
Low drain to tab capacitance(<15pF)  
Unclamped Inductive Switching (UIS)  
rated  
TL  
1.6 mm (0.062 in.) from case for 1
RMS leads-to-tab, 50/60 Hz, t = 1 min
Mounting force with clips  
300  
°C  
V~  
N/lb  
g
VISOL  
FC  
2500  
11 ... 65 / 2.4 ...11  
2
Applications  
Weight  
Automotive 42V and 12V systems  
- electronic switches to replace relays  
& fuses  
- choppers to replace series dropping  
resistors used for motors, heaters, etc.  
- inverters for AC drives  
- DC-DC converters, e.g. 12V to 42V, etc.  
Power supplies  
- DC - DC converters  
- Solar inverters  
Symbol  
RDS(on)  
Test Cition
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VG10 V, ID = ID90, Note 3  
VDS = VGS, ID = 1 mA  
6.1  
0.1  
7.7 mΩ  
Battery powered systems  
- choppers or inverters for motor control in  
hand tools  
VGS(th)  
IDSS  
2
4
V
VDS = V  
10 µA  
VGS = 0DVSS  
TJ = 125°C  
mA  
- battery chargers  
Advantages  
IGSS  
VGS = 20 VDC, VDS = 0  
200  
nA  
Easy assembly: no screws or isolation  
foils required  
Space savings  
High power density  
DS98760(08/03)  
© 2003 IXYS All rights reserved  

IXUC100N055 替代型号

型号 品牌 替代类型 描述 数据表
STP60NF06 STMICROELECTRONICS

功能相似

N-CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220F
STP55NF06 STMICROELECTRONICS

功能相似

N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220
STP80NF10 STMICROELECTRONICS

功能相似

N-CHANNEL 100V - 0.012ohm - 80A D2PAK LOW GAT

与IXUC100N055相关器件

型号 品牌 获取价格 描述 数据表
IXUC120N10 IXYS

获取价格

Trench Power MOSFET ISOPLUS220
IXUC160N075 IXYS

获取价格

Trench Power MOSFET
IXUC200N055 IXYS

获取价格

Trench Power MOSFET ISOPLUS220
IXUC60N10 IXYS

获取价格

Trench Power MOSFET ISOPLUS220-TM
IXUN280N10 IXYS

获取价格

Power Field-Effect Transistor, 280A I(D), 100V, 0.005ohm, 1-Element, N-Channel, Silicon, M
IXUN350N10 IXYS

获取价格

Power Field-Effect Transistor, 350A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon,
IXUV170N075 LITTELFUSE

获取价格

沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低
IXUV170N075S LITTELFUSE

获取价格

沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低
IXWW11-AL IXYS

获取价格

Silicon Chip Resistors
IXWW13-AL IXYS

获取价格

Silicon Chip Resistors