Datasheet > IXGN82N120C3H1

IXGN82N120C3H1

更新时间： 2024-04-02 21:14:51

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
3页	171K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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IXGN82N120C3H1 数据手册

IXGN82N120C3H1

Symbol

Test Conditions

Characteristic Values

SOT-227B miniBLOC (IXGN)

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

g_fs

I_C= 60A, V_CE= 10V, Note 2

V_CE= 25V, V_GE= 0V, f = 1 MHz

C_ies

C_oes

C_res

Q_g(on)

Q_ge

Q_gc

t_d(on)

t_ri

7900

685

197

340

I_C= 82A, V_GE= 15V, V_CE= 0.5 • V_CES

145

Inductive load, T_J= 25°C

I_C= 82A, V_GE= 15V

V_CE= 0.5 • V_CES, R_G= 2Ω

Note 3

E_on

t_d(off)

t_fi

5.0

194

100

2.5

E_off

t_d(on)

t_ri

5.0

Inductive load, T_J= 125°C

I_C= 82A, V_GE= 15V

E_on

t_d(off)

t_fi

6.8

230

270

4.0

V_CE= 0.5 • V_CES, R_G= 2Ω

Note 3

E_off

R_thJC

R_thCK

0.21 °C/W

°C/W

0.05

Reverse Diode (FRED)

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

V_F

I_F= 60A, V_GE= 0V, Note 1

2.5

1.8

T_J= 150°C

T_J= 100°C

1.4

8.3

I_RM

I_F= 60A, V_GE= 0V,

-di_F/dt = 200A/μs, V_R= 300V

t_rr

140

0.42 °C/W

R_thJC

Notes:

1. Part must be heatsunk for high-temp Ices measurement.

2. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

3. Switching times & energy losses may increase for higher V_CE(Clamp), T_Jor R_G.

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

by one or moreof the following U.S. patents: 4,850,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1 6,683,344

6,534,343

6,583,505

6,727,585

6,710,405 B2 6,759,692

6,710,463

7,005,734 B2 7,157,338B2

7,063,975 B2

6,771,478 B2 7,071,537

123

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与IXGN82N120C3H1相关器件

型号	品牌	获取价格	描述	数据表
IXGP10N100	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1KV V(BR)CES \| 20A I(C) \| TO-220AB
IXGP10N100A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1KV V(BR)CES \| 20A I(C) \| TO-220AB
IXGP10N50	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 500V V(BR)CES \| 20A I(C) \| TO-220AB
IXGP10N50A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 500V V(BR)CES \| 20A I(C) \| TO-220AB
IXGP10N60	IXYS	获取价格	Low VCE(sat) IGBT, High speed IGBT
IXGP10N60A	IXYS	获取价格	Low VCE(sat) IGBT, High speed IGBT
IXGP10N80	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 800V V(BR)CES \| 20A I(C) \| TO-220AB
IXGP10N80A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 800V V(BR)CES \| 220A I(C) \| TO-220AB
IXGP10N90	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 900V V(BR)CES \| 20A I(C) \| TO-220AB
IXGP10N90A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 900V V(BR)CES \| 20A I(C) \| TO-220AB

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