Datasheet > IXGN72N60C3H1

IXGN72N60C3H1

更新时间： 2024-03-12 21:01:44

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
8页	249K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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数据手册

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IXGN72N60C3H1 数据手册

IXGN72N60C3H1

Symbol

Test Conditions

Characteristic Values

SOT-227B miniBLOC

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

g_fs

I_C= 50A, V_CE= 10V, Note 1

V_CE= 25V, V_GE= 0V, f = 1MHz

C_ies

C_oes

C_res

4780

330

117

Q_g

174

Q_ge

Q_gc

I_C= 50A, V_GE= 15V, V_CE= 0.5 • V_CES

t_d(on)

t_ri

Inductive load, T_J= 25°C

M4 screws (4x) supplied

E_on

t_d(off)

t_fi

1.03

I_C= 50A, V_GE= 15V

130 ns

110 ns

V_CE= 480V, R_G= 2Ω, Note 2

E_off

0.48

0.95 mJ

t_d(on)

t_ri

Inductive load, T_J= 125°C

I_C= 50A, V_GE= 15V

E_on

t_d(off)

t_fi

1.48

120

124

0.93

V_CE= 480V, R_G= 2Ω, Note 2

E_off

R_thJC

R_thCS

0.35 °C/W

°C/W

0.05

Reverse Diode (FRED)

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

V_F

I_F= 60A, V_GE= 0V, Note 1

1.6

1.4

2.0

1.8

T_J= 150°C

T_J= 100°C

I_RM

t_rr

8.3

I_F= 60A, V_GE= 0V,

-di_F/dt = 200A/μs, V_R= 300V

140

0.42 °C/W

R_thJC

Notes:

1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher V_CE(Clamp), T_Jor R_G.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

by one or moreof the following U.S. patents: 4,850,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1 6,683,344

6,534,343

6,583,505

6,727,585

6,710,405 B2 6,759,692

6,710,463

7,005,734 B2 7,157,338B2

7,063,975 B2

6,771,478 B2 7,071,537

123 4 5 6 7 8

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