Datasheet > IXGH56N60B3D1

IXGH56N60B3D1

更新时间： 2023-12-06 20:13:12

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
8页	262K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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IXGH56N60B3D1 数据手册

IXGH56N60B3D1

Fig. 12. Inductive Switching Energy Loss vs.

Gate Resistance

Fig. 13. Inductive Swiching Energy Loss vs.

Collector Current

5.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

4.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

_on- - - -

off

R_G= 5Ω

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

I _C= 72A

V_GE= 15V



V_CE= 480V

_on- - - -

off

T_J= 125ºC , V_GE= 15V

_CE= 480V

T_J= 125ºC

I _C= 36A

T_J= 25ºC

I _C= 18A

20 25

15 20 25 30 35 40 45 50 55 60 65 70 75

I_C- Amperes

R_G- Ohms

Fig. 14. Inductive Swiching Energy Loss vs.

Junction Temperature

Fig. 15. Inductive Turn-off Switching Times

vs. Gate Resistance

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

4.5

240

220

200

180

160

140

120

100

900

800

700

600

500

400

300

200

_on- - - -

t_f

t_d(off)

- - - -

T_J= 125ºC, V_GE= 15V

off

R_G= 5Ω

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

V_GE= 15V



_CE= 480V

V_CE= 480V

I _C= 72A

I _C= 36A

I _C= 18A

I _C= 36A

I _C= 18A

105 115 125

T_J- Degrees Centigrade

R_G- Ohms

Fig. 16. Inductive Turn-off Switching Times

vs. Collector Current

Fig. 17. Inductive Turn-off Switching Times

vs. Junction Temperature

210

190

170

150

130

110

260

210

190

170

150

130

110

255

240

225

210

195

180

165

150

t_f

t_d(off)

- - - -

I _C= 18A, 36A, 72A

T_J= 125ºC

240

220

200

180

160

140

120

R_G= 5Ω , V_GE= 15V



V_CE= 480V

t _f

R_G= 5Ω , V_GE= 15V

t_d(off)

- - - -



_CE= 480V

T_J= 25ºC

I _C= 36A, 18A

95 105 115 125

15 20 25 30 35 40 45 50 55 60 65 70 75

I_C- Amperes

T_J- Degrees Centigrade

1 2 3 456 7 8

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