Datasheet > IXGH56N60B3D1

IXGH56N60B3D1

更新时间： 2023-12-06 20:13:12

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
8页	262K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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IXGH56N60B3D1 数据手册

IXGH56N60B3D1

Symbol Test Conditions

(T_J= 25°C Unless Otherwise Specified)

Characteristic Values

TO-247 (IXGH) Outline

Min.

Typ.

Max.

g_fs

I_C= 44A, V_CE= 10V, Note 1

C_ies

C_oes

C_res

3950

220

V_CE= 25V, V_GE= 0V, f = 1MHz

Q_g(on)

Q_ge

Q_gc

138

I_C= 40A, V_GE= 15V, V_CE= 0.5 • V_CES

t_d(on)

t_ri

E_on

t_d(off)

t_fi

1 - Gate

2,4 - Collector

3 - Source

3 - Emitter

2,4 - Drain

Inductive Load, T_J= 25°C

I_C= 44A, V_GE= 15V

1.30

155

335

165

2.0

V_CE= 480V, R_G= 5

Note 2

E_off

1.05

t_d(on)

t_ri

E_on

t_d(off)

t_fi

Inductive Load, T_J= 125°C

I_C= 44A, V_GE= 15V

2.34

220

165

2.20

V_CE= 480V, R_G= 5

Note 2

E_off

R_thJC

R_thCS

0.375 °C/W

0.21

°C/W

Reverse Diode (FRED)

Symbol Test Conditions

(T_J= 25°C Unless Otherwise Specified)

Characteristic Values

Min. Typ. Max.

V_F

I_F= 30A, V_GE= 0V, Note 1

2.7

T_J= 150°C

1.6

I_F= 30A, V_GE= 0V, -di_F/dt = 100A/μs,

V_R= 100V

I_F= 1A, V_GE= 0V, -di_F/dt = 100A/μs, V_R= 30V

T_J= 100°C

I_RM

t_rr

100

R_thJC

0.9 °C/W

Notes:

1. Pulse test, t  300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V_CE(clamp), T_Jor R_G.

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

IXYS MOSFETs and IGBTs are covered

by one or more of the following U.S. patents: 4,860,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1 6,683,344

6,534,343

6,583,505

6,727,585

6,710,405 B2 6,759,692

6,710,463

7,005,734 B2 7,157,338B2

7,063,975 B2

6,771,478 B2 7,071,537

123 4 5 6 7 8

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