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IXA27IF1200HJ PDF预览

IXA27IF1200HJ

更新时间: 2024-11-05 12:49:27
品牌 Logo 应用领域
IXYS 晶体晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
6页 134K
描述
Easy paralleling due to the positive temperature coefficient of the on-state voltage

IXA27IF1200HJ 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:TO-247AD
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:8.48Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):43 A
集电极-发射极最大电压:1200 V配置:SINGLE WITH BUILT-IN DIODE
门极发射器阈值电压最大值:6.5 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):150 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:TIN SILVER COPPER
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):350 ns
标称接通时间 (ton):110 nsBase Number Matches:1

IXA27IF1200HJ 数据手册

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IXA27IF1200HJ  
VCES  
IC25  
=
=
=
1200V  
43A  
XPT IGBT  
VCE(sat)  
1.8V  
Copack  
Part number  
IXA27IF1200HJ  
Backside: isolated  
2 (C)  
(G) 1  
3 (E)  
ISOPLUS247  
Features / Advantages:  
Applications:  
Package:  
Easy paralleling due to the positive temperature  
coefficient of the on-state voltage  
Rugged XPT design (Xtreme light Punch Through)  
results in:  
- short circuit rated for 10 µsec.  
- very low gate charge  
AC motor drives  
Solar inverter  
Isolation Voltage:  
Industry standard outline  
RoHS compliant  
Epoxy meets UL 94V-0  
Soldering pins for PCB mounting  
Backside: DCB ceramic  
Reduced weight  
V~  
3600  
Medical equipment  
Uninterruptible power supply  
Air-conditioning systems  
Welding equipment  
Switched-mode and resonant-mode  
power supplies  
- low EMI  
- square RBSOA @ 3x Ic  
Advanced power cycling  
Thin wafer technology combined with the XPT design  
results in a competitive low VCE(sat)  
SONIC™ diode  
Inductive heating, cookers  
Pumps, Fans  
- fast and soft reverse recovery  
- low operating forward voltage  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20100623b  
© 2010 IXYS all rights reserved  

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