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ISL9G1260EG3 PDF预览

ISL9G1260EG3

更新时间: 2024-09-18 23:59:51
品牌 Logo 应用领域
其他 - ETC 晶体晶体管双极性晶体管
页数 文件大小 规格书
11页 149K
描述
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-247

ISL9G1260EG3 数据手册

 浏览型号ISL9G1260EG3的Datasheet PDF文件第2页浏览型号ISL9G1260EG3的Datasheet PDF文件第3页浏览型号ISL9G1260EG3的Datasheet PDF文件第4页浏览型号ISL9G1260EG3的Datasheet PDF文件第5页浏览型号ISL9G1260EG3的Datasheet PDF文件第6页浏览型号ISL9G1260EG3的Datasheet PDF文件第7页 
ISL9G1260EG3, ISL9G1260EP3, ISL9G1260ES3  
Data Sheet  
January 2001  
File Number 5019  
600V, SMPS II LGC Series N-Channel IGBT  
Features  
[ /Title  
(ISL9  
G1260  
EG3,  
ISL9G  
1260E  
P3,  
ISL9G  
1260E  
S3)  
The ISL9G1260EG3, ISL9G1260EP3 and ISL9G1260ES3  
are Low Gate Charge (LGC) SMPS II IGBTs combining the  
fast switching speed of the SMPS IGBTs with lower gate  
charge and avalanche capability (UIS). These LGC devices  
shorten delay times, and reduce the power requirement of  
the gate drive. These devices are ideally suited for high  
voltage switched mode power supply applications where low  
conduction loss, fast switching times and UIS capability are  
essential. SMPS II LGC devices have been specially  
designed for:  
• >100kHz Operation at 390V,12A  
• 200kHz Operation at 390V, 9A  
• 600V Switching SOA Capability  
o
Typical Fall Time. . . . . . . . . . . . . . . . . .72ns at T = 125 C  
J
• Low Gate Charge. . . . . . . . . . . . . . . . .23nC at V = 15V  
GE  
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .150mJ  
• Low Conduction Loss  
Symbol  
• Power Factor Correction (PFC) Circuits  
• Full Bridge Topologies  
• Half Bridge Topologies  
• Push-Pull Circuits  
• Uninterruptible Power Supplies  
• Zero Voltage and Zero Current Switching Circuits  
/Subjec  
t
C
(600V,  
SMPS  
II LGC  
Series  
N-  
Chann  
el  
IGBT)  
/Autho  
r ()  
/Keyw  
ords  
(Intersi  
l
Corpor  
ation,  
semico  
nducto  
r,  
G
Formerly Developmental Type TA49367.  
E
Ordering Information  
PART NUMBER  
ISL9G1260EG3  
ISL9G1260EP3  
ISL9G1260ES3  
PACKAGE  
BRAND  
G1260EG3  
TO-247  
TO-220AB  
TO-263AB  
G1260EP3  
G1260ES3  
NOTE: When ordering, use the entire part number. Add the suffix T  
to obtain the TO-263AB variant in tape and reel, e.g.,  
ISL9G1260ES3T.  
Packaging  
JEDEC STYLE TO-247  
JEDEC TO-220AB  
E
C
G
E
C
G
COLLECTOR  
(FLANGE)  
COLLECTOR  
(FLANGE)  
600V,  
SMPS  
II LGC  
Series  
N-  
JEDEC TO-263AB  
COLLECTOR  
(FLANGE)  
G
E
Chann  
el  
IGBT,  
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
©2001 Fairchild Semiconductor Corporation  
ISL9G1260EG3, ISL9G1260EP3, ISL9G1260ES3 Rev. A  

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TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
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ISL9G2060EG3 ETC

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TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 35A I(C) | TO-247
ISL9G2060EP3 ETC

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TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 35A I(C) | TO-220AB
ISL9G2060ES3 ETC

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TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 35A I(C) | TO-263AB
ISL9G2060ES39A ETC

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TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 35A I(C) | TO-263AB
ISL9H1260EG3 ETC

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TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-247
ISL9H1260EP3 ETC

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TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
ISL9H1260ES3 ETC

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TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB