Datasheet > IS66WVE2M16DALL-70BLI

IS66WVE2M16DALL-70BLI

更新时间： 2024-11-14 12:23:07

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器
页数	文件大小	规格书
28页	505K
描述
1.8V Core Async/Page PSRAM

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IS66WVE2M16DALL-70BLI 技术参数

生命周期：	Obsolete	包装说明：	TFBGA,
Reach Compliance Code：	compliant	风险等级：	5.74
最长访问时间：	70 ns	JESD-30 代码：	R-PBGA-B48
长度：	8 mm	内存密度：	33554432 bit
内存集成电路类型：	PSEUDO STATIC RAM	内存宽度：	16
功能数量：	1	端子数量：	48
字数：	2097152 words	字数代码：	2000000
工作模式：	ASYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	2MX16
封装主体材料：	PLASTIC/EPOXY	封装代码：	TFBGA
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行：	PARALLEL	座面最大高度：	1.2 mm
最大供电电压 (Vsup)：	1.95 V	最小供电电压 (Vsup)：	1.7 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子形式：	BALL	端子节距：	0.75 mm
端子位置：	BOTTOM	宽度：	6 mm
Base Number Matches：	1

IS66WVE2M16DALL-70BLI 数据手册

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IS66WVE2M16DALL

1.8V Core Async/Page PSRAM

Overview

The IS66WVE2M16DALL is an integrated memory device containing 32Mbit Pseudo Static Random Access

Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several

power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and

Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power

rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.

Features

 Asynchronous and page mode interface

 Dual voltage rails for optional performance

 VDD 1.8V, VDDQ 1.8V

 Low Power Feature

 Temperature Controlled Refresh

 Partial Array Refresh

 Deep power-down (DPD) mode

 Operating temperature Range

Industrial -40°C~85°C

 Page mode read access

 Interpage Read access : 70ns

 Intrapage Read access : 20ns

 Low Power Consumption

 Package:

48-ball TFBGA

 Asynchronous Operation < 30 mA

 Intrapage Read < 18mA

 Standby < 150 uA (max.)

 Deep power-down (DPD) < 3uA (Typ)

products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services

described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information

and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or

malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or

effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to

its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

www.issi.com - SRAM@issi.com

Rev. B | May 2012

12 3 4 5 6 7...28

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与IS66WVE2M16DALL-70BLI相关器件

型号	品牌	获取价格	描述	数据表
IS66WVE2M16DBLL	ISSI	获取价格	3.0V Core Async/Page PSRAM
IS66WVE2M16DBLL-70BLI	ISSI	获取价格	Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48
IS66WVE2M16EALL	ISSI	获取价格	Asynchronous and page mode interface
IS66WVE2M16EALL-70BLI	ISSI	获取价格	Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48
IS66WVE2M16EALL-70BLI-TR	ISSI	获取价格	IC PSRAM 32MBIT 70NS 48BGA
IS66WVE2M16EBLL-70BLI	ISSI	获取价格	Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48
IS66WVE2M16ECLL-70BLI	ISSI	获取价格	Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48
IS66WVE2M16TCLL-70BLI	ISSI	获取价格	Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48
IS66WVE409616BLL-70BLI	ISSI	获取价格	Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MO-207, TFBGA-48
IS66WVE4M16ALL	ISSI	获取价格	1.8V Core Async/Page PSRAM

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