Datasheet > IS66WVE4M16TALL-70BLI

IS66WVE4M16TALL-70BLI

更新时间： 2024-11-14 19:49:43

品牌	Logo	应用领域
美国芯成 - ISSI		内存集成电路
页数	文件大小	规格书
34页	684K
描述
Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48

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IS66WVE4M16TALL-70BLI 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	TFBGA, BGA48,6X8,30	Reach Compliance Code：	compliant
HTS代码：	8542.32.00.41	风险等级：	5.76
最长访问时间：	70 ns	I/O 类型：	COMMON
JESD-30 代码：	R-PBGA-B48	JESD-609代码：	e1
长度：	8 mm	内存密度：	67108864 bit
内存集成电路类型：	PSEUDO STATIC RAM	内存宽度：	16
功能数量：	1	端口数量：	1
端子数量：	48	字数：	4194304 words
字数代码：	4000000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	4MX16	输出特性：	3-STATE
可输出：	NO	封装主体材料：	PLASTIC/EPOXY
封装代码：	TFBGA	封装等效代码：	BGA48,6X8,30
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	260
反向引出线：	NO	座面最大高度：	1.2 mm
最大待机电流：	0.00015 A	最小待机电流：	1.7 V
最大压摆率：	0.025 mA	最大供电电压 (Vsup)：	1.95 V
最小供电电压 (Vsup)：	1.7 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)	端子形式：	BALL
端子节距：	0.75 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	10	宽度：	6 mm
Base Number Matches：	1

IS66WVE4M16TALL-70BLI 数据手册

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IS66/67WVE4M16EALL/EBLL/ECLL

IS66/67WVE4M16TALL/TBLL/TCLL

64Mb Async/Page PSRAM

NOVEMBER 2015

Overview

The IS66/67WVE4M16EALL/BLL/CLL and IS66/67WVE4M16TALL/BLL/CLL integrated memory device

containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M

words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where

data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby

current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate

power supply from the device core.

Features

 Asynchronous and page mode interface

 Dual voltage rails for optional performance

 Low Power Feature

 Temperature Controlled Refresh

 Partial Array Refresh

 Deep power-down (DPD) mode

 Operating temperature Range

 ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V

 BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V

 CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V

 Page mode read access

 Interpage Read access : 60ns, 70ns

 Intrapage Read access : 25ns

 Low Power Consumption

 Asynchronous Operation < 30 mA

 Intrapage Read < 23mA

 Standby < 200 uA (max.)

 Deep power-down (DPD)

 ALL/CLL: < 3µA (Typ)

Industrial: -40°C~85°C

Automotive A1: -40°C~85°C

 Packages:

48-ball TFBGA

 BLL: < 10µA (Typ)

Notes:

1. The 48-pin TSOP-I package option is not yet available. Please contact SRAM Marketing at sram@issi.com

for additional information.

products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services

described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information

and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or

malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or

effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to

its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Rev. D | Oct. 2015

www.issi.com - SRAM@issi.com

12 3 4 5 6 7...34

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与IS66WVE4M16TALL-70BLI相关器件

型号	品牌	获取价格	描述	数据表
IS66WVE4M16TBLL-55BLI	ISSI	获取价格	Pseudo Static RAM, 4MX16, 55ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48
IS66WVE4M16TBLL-70BLI	ISSI	获取价格	Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48
IS66WVE4M16TBLL-70BLI-TR	ISSI	获取价格	Pseudo Static RAM,
IS66WVE51216BLL	ISSI	获取价格	Asynchronous and page mode interface
IS66WVE51216CLL	ISSI	获取价格	Asynchronous and page mode interface
IS66WVE51216EALL	ISSI	获取价格	Asynchronous and page mode interface
IS66WVH8M8ALL-166B1LI	ISSI	获取价格	Pseudo Static RAM, 8MX8, CMOS, PBGA24, 6 X 8 MM, 1.20 MM HEIGHT, LEAD FREE, MO-207, TFBGA-
IS66WVH8M8BLL-100B1LI	ISSI	获取价格	Pseudo Static RAM, 8MX8, CMOS, PBGA24, 6 X 8 MM, 1.20 MM HEIGHT, LEAD FREE, MO-207, TFBGA-
IS66WVO16M8EDALL-100BLA2	ISSI	获取价格	SRAM,
IS66WVO16M8EDALL-100BLI	ISSI	获取价格	SRAM,

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