Datasheet > IS66WVE4M16TBLL-70BLI

IS66WVE4M16TBLL-70BLI

更新时间： 2024-11-14 20:06:31

品牌	Logo	应用领域
美国芯成 - ISSI		内存集成电路
页数	文件大小	规格书
34页	482K
描述
Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48

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IS66WVE4M16TBLL-70BLI 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	TFBGA, BGA48,6X8,30	Reach Compliance Code：	compliant
HTS代码：	8542.32.00.41	Factory Lead Time：	10 weeks
风险等级：	2.31	最长访问时间：	70 ns
I/O 类型：	COMMON	JESD-30 代码：	R-PBGA-B48
JESD-609代码：	e1	长度：	8 mm
内存密度：	67108864 bit	内存集成电路类型：	PSEUDO STATIC RAM
内存宽度：	16	功能数量：	1
端口数量：	1	端子数量：	48
字数：	4194304 words	字数代码：	4000000
工作模式：	ASYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	4MX16
输出特性：	3-STATE	可输出：	NO
封装主体材料：	PLASTIC/EPOXY	封装代码：	TFBGA
封装等效代码：	BGA48,6X8,30	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, THIN PROFILE, FINE PITCH	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	NOT SPECIFIED	反向引出线：	NO
座面最大高度：	1.2 mm	最大待机电流：	0.00015 A
最小待机电流：	2.7 V	最大压摆率：	0.025 mA
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	2.7 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：	BALL	端子节距：	0.75 mm
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	6 mm	Base Number Matches：	1

IS66WVE4M16TBLL-70BLI 数据手册

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IS66/67WVE4M16EALL/BLL/CLL

IS66/67WVE4M16TALL/BLL/CLL

64Mb Async/Page PSRAM

JULY 2017

Overview

The IS66/67WVE4M16EALL/BLL/CLL and IS66/67WVE4M16TALL/BLL/CLL integrated memory device

containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M

words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where

data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby

current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate

power supply from the device core.

Features

 Asynchronous and page mode interface

 Dual voltage rails for optional performance

 Low Power Feature

 Temperature Controlled Refresh

 Partial Array Refresh

 Deep power-down (DPD) mode

 Operating temperature Range

 ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V

 BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V

 CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V

 Page mode read access

Industrial: -40°C~85°C

Automotive A1: -40°C~85°C

Automotive A2: -40°C~105°C

 Interpage Read access : 60ns, 70ns

 Intrapage Read access : 25ns

 Low Power Consumption

 Asynchronous Operation < 30 mA

 Intrapage Read < 23mA

 Packages:

48-ball TFBGA

 Standby < 200 uA (max.) at -40°C~85°C

 Deep power-down (DPD)

 ALL/CLL: < 3µA (Typ)

 BLL: < 10µA (Typ)

Notes:

1. The 48-pin TSOP-I package option is not yet available. Please contact SRAM Marketing at sram@issi.com

for additional information.

products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services

described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information

and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or

malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or

effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to

its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Rev. D1 | Junly 2017

www.issi.com - SRAM@issi.com

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与IS66WVE4M16TBLL-70BLI相关器件

型号	品牌	获取价格	描述	数据表
IS66WVE4M16TBLL-70BLI-TR	ISSI	获取价格	Pseudo Static RAM,
IS66WVE51216BLL	ISSI	获取价格	Asynchronous and page mode interface
IS66WVE51216CLL	ISSI	获取价格	Asynchronous and page mode interface
IS66WVE51216EALL	ISSI	获取价格	Asynchronous and page mode interface
IS66WVH8M8ALL-166B1LI	ISSI	获取价格	Pseudo Static RAM, 8MX8, CMOS, PBGA24, 6 X 8 MM, 1.20 MM HEIGHT, LEAD FREE, MO-207, TFBGA-
IS66WVH8M8BLL-100B1LI	ISSI	获取价格	Pseudo Static RAM, 8MX8, CMOS, PBGA24, 6 X 8 MM, 1.20 MM HEIGHT, LEAD FREE, MO-207, TFBGA-
IS66WVO16M8EDALL-100BLA2	ISSI	获取价格	SRAM,
IS66WVO16M8EDALL-100BLI	ISSI	获取价格	SRAM,
IS66WVO16M8EDALL-100WLA2	ISSI	获取价格	SRAM,
IS66WVO16M8EDALL-100WLI	ISSI	获取价格	SRAM,

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