Datasheet > IS66WVE51216EALL

IS66WVE51216EALL

更新时间： 2024-11-15 01:11:39

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
31页	624K
描述
Asynchronous and page mode interface

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IS66WVE51216EALL 数据手册

IS66WVE51216EALL/BLL/CLL

IS67WVE51216EALL/BLL/CLL

8Mb Async/Page PSRAM

PRELIMINARY INFORMATION

Overview

The IS66/67WVE51216EALL/BLL/CLL is an integrated memory device containing 8Mbit Pseudo Static

Random Access Memory using a self-refresh DRAM array organized as 512K words by 16 bits. The device

includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of

the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has

separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device

core.

Features

 Asynchronous and page mode interface

 Dual voltage rails for optional performance

 Low Power Feature

 Temperature Controlled Refresh

 Partial Array Refresh

 Deep power-down (DPD) mode

 Operating temperature Range

 ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V

 BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V

 CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V

 Page mode read access

 Interpage Read access : 55ns, 70ns

 Intrapage Read access : 20ns

 Low Power Consumption

 Asynchronous Operation < 30 mA

 Intrapage Read < 23 mA

 Standby < 150 uA (max.)

 Deep power-down (DPD)

 ALL/CLL: < 3µA (Typ)

Industrial: -40°C~85°C

Automotive A1: -40°C~85°C

 Package:

48-ball TFBGA

 BLL: < 10µA (Typ)

products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services

described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information

and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or

malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or

effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to

its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

www.issi.com - SRAM@issi.com

Rev. 0D | November 2014

12 3 4 5 6 7...31

中文翻译

下载PDF

与IS66WVE51216EALL相关器件

型号	品牌	获取价格	描述	数据表
IS66WVH8M8ALL-166B1LI	ISSI	获取价格	Pseudo Static RAM, 8MX8, CMOS, PBGA24, 6 X 8 MM, 1.20 MM HEIGHT, LEAD FREE, MO-207, TFBGA-
IS66WVH8M8BLL-100B1LI	ISSI	获取价格	Pseudo Static RAM, 8MX8, CMOS, PBGA24, 6 X 8 MM, 1.20 MM HEIGHT, LEAD FREE, MO-207, TFBGA-
IS66WVO16M8EDALL-100BLA2	ISSI	获取价格	SRAM,
IS66WVO16M8EDALL-100BLI	ISSI	获取价格	SRAM,
IS66WVO16M8EDALL-100WLA2	ISSI	获取价格	SRAM,
IS66WVO16M8EDALL-100WLI	ISSI	获取价格	SRAM,
IS66WVO16M8EDALL-133BLI	ISSI	获取价格	SRAM,
IS66WVO16M8EDALL-166BLA2	ISSI	获取价格	SRAM,
IS67WV51216DBLL-55BLA1-TR	ISSI	获取价格	Application Specific SRAM, 512KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, BGA-4
IS67WV51216DBLL-55TLA1	ISSI	获取价格	Pseudo Static RAM, 512KX16, 55ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44

与IS66WVE51216EALL相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

29
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

12
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

14
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

35

产品中心

服务支持

精选活动

关于我们

帮助中心

IS66WVE51216EALL

IS66WVE51216EALL 数据手册

与IS66WVE51216EALL相关器件

与IS66WVE51216EALL相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IS66WVE51216EALL

IS66WVE51216EALL 数据手册

与IS66WVE51216EALL相关器件

与IS66WVE51216EALL相关文章

您还可以找

您在本页遇到什么问题？