5秒后页面跳转
捷配首页

Datasheet > IS66WVE4M16EBLL-55BLI
IS66WVE4M16EBLL-55BLI PDF预览

IS66WVE4M16EBLL-55BLI

更新时间： 2024-11-14 20:06:31
品牌 Logo 应用领域
美国芯成 - ISSI 内存集成电路
页数 文件大小 规格书
34页 482K
描述
Pseudo Static RAM, 4MX16, 55ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48

阅读下载

中文翻译

获取价格

IS66WVE4M16EBLL-55BLI 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：TFBGA, BGA48,6X8,30Reach Compliance Code：compliant
Factory Lead Time：14 weeks风险等级：5.71
最长访问时间：55 nsI/O 类型：COMMON
JESD-30 代码：R-PBGA-B48JESD-609代码：e1
长度：8 mm内存密度：67108864 bit
内存集成电路类型：PSEUDO STATIC RAM内存宽度：16
湿度敏感等级：3功能数量：1
端口数量：1端子数量：48
字数：4194304 words字数代码：4000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：4MX16
输出特性：3-STATE可输出：NO
封装主体材料：PLASTIC/EPOXY封装代码：TFBGA
封装等效代码：BGA48,6X8,30封装形状：RECTANGULAR
封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED反向引出线：NO
座面最大高度：1.2 mm最大待机电流：0.00015 A
最小待机电流：2.7 V最大压摆率：0.025 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：BALL端子节距：0.75 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：6 mmBase Number Matches：1

IS66WVE4M16EBLL-55BLI 数据手册

 浏览型号IS66WVE4M16EBLL-55BLI的Datasheet PDF文件第2页浏览型号IS66WVE4M16EBLL-55BLI的Datasheet PDF文件第3页浏览型号IS66WVE4M16EBLL-55BLI的Datasheet PDF文件第4页浏览型号IS66WVE4M16EBLL-55BLI的Datasheet PDF文件第5页浏览型号IS66WVE4M16EBLL-55BLI的Datasheet PDF文件第6页浏览型号IS66WVE4M16EBLL-55BLI的Datasheet PDF文件第7页 
IS66/67WVE4M16EALL/BLL/CLL  
IS66/67WVE4M16TALL/BLL/CLL  
64Mb Async/Page PSRAM  
JULY 2017  
Overview  
The IS66/67WVE4M16EALL/BLL/CLL and IS66/67WVE4M16TALL/BLL/CLL integrated memory device  
containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M  
words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where  
data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby  
current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate  
power supply from the device core.  
Features  
Asynchronous and page mode interface  
Dual voltage rails for optional performance  
Low Power Feature  
Temperature Controlled Refresh  
Partial Array Refresh  
Deep power-down (DPD) mode  
Operating temperature Range  
ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V  
BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V  
CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V  
Page mode read access  
Industrial: -40°C~85°C  
Automotive A1: -40°C~85°C  
Automotive A2: -40°C~105°C  
Interpage Read access : 60ns, 70ns  
Intrapage Read access : 25ns  
Low Power Consumption  
Asynchronous Operation < 30 mA  
Intrapage Read < 23mA  
Packages:  
48-ball TFBGA  
Standby < 200 uA (max.) at -40°C~85°C  
Deep power-down (DPD)  
ALL/CLL: < 3µA (Typ)  
BLL: < 10µA (Typ)  
Notes:  
1. The 48-pin TSOP-I package option is not yet available. Please contact SRAM Marketing at sram@issi.com  
for additional information.  
Copyright © 2017 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its  
products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services  
described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information  
and before placing orders for products.  
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or  
malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or  
effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to  
its satisfaction, that:  
a.) the risk of injury or damage has been minimized;  
b.) the user assume all such risks; and  
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances  
1
Rev. D1 | Junly 2017  
www.issi.com - SRAM@issi.com  
1234567...34

中文翻译

下载PDF

IS66WVE4M16EBLL-55BLI 替代型号

型号 品牌 替代类型 描述 数据表
IS66WVE4M16EBLL-55BLI-TR ISSI

完全替代

 IC PSRAM 64MBIT 55NS 48BGA

与IS66WVE4M16EBLL-55BLI相关器件

型号 品牌 获取价格 描述 数据表
IS66WVE4M16EBLL-55BLI-TR ISSI

获取价格

 		IC PSRAM 64MBIT 55NS 48BGA
IS66WVE4M16EBLL-70BLI ISSI

获取价格

 		Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48
IS66WVE4M16EBLL-70BLI-TR ISSI

获取价格

 		Pseudo Static RAM,
IS66WVE4M16ECLL-70BLI ISSI

获取价格

 		Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48
IS66WVE4M16TALL-70BLI ISSI

获取价格

 		Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48
IS66WVE4M16TBLL-55BLI ISSI

获取价格

 		Pseudo Static RAM, 4MX16, 55ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48
IS66WVE4M16TBLL-70BLI ISSI

获取价格

 		Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48
IS66WVE4M16TBLL-70BLI-TR ISSI

获取价格

 		Pseudo Static RAM,
IS66WVE51216BLL ISSI

获取价格

 		Asynchronous and page mode interface
IS66WVE51216CLL ISSI

获取价格

 		Asynchronous and page mode interface

与IS66WVE4M16EBLL-55BLI相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证