Datasheet > IS66WVE4M16BLL-70BLI

IS66WVE4M16BLL-70BLI

更新时间： 2024-11-14 12:23:07

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器
页数	文件大小	规格书
30页	530K
描述
3.0V Core Async/Page PSRAM

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技术参数
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IS66WVE4M16BLL-70BLI 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	DSBGA
包装说明：	6 X 8 MM, LEAD FREE, MO-207, FBGA-48	针数：	48
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	8.32
最长访问时间：	70 ns	I/O 类型：	COMMON
JESD-30 代码：	R-PBGA-B48	JESD-609代码：	e1
长度：	8 mm	内存密度：	67108864 bit
内存集成电路类型：	PSEUDO STATIC RAM	内存宽度：	16
湿度敏感等级：	3	功能数量：	1
端子数量：	48	字数：	4194304 words
字数代码：	4000000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	4MX16	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	TFBGA
封装等效代码：	BGA48,6X8,30	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, THIN PROFILE, FINE PITCH	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	260	电源：	3/3.3 V
认证状态：	Not Qualified	座面最大高度：	1.2 mm
最大待机电流：	0.00001 A	子类别：	Other Memory ICs
最大压摆率：	0.03 mA	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	2.7 V	标称供电电压 (Vsup)：	3 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：	BALL	端子节距：	0.75 mm
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	40
宽度：	6 mm	Base Number Matches：	1

IS66WVE4M16BLL-70BLI 数据手册

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IS66WVE4M16BLL

3.0V Core Async/Page PSRAM

Overview

The IS66WVE4M16BLL is an integrated memory device containing 64Mbit Pseudo Static Random Access

Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several

power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and

Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power

rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.

Features

 Asynchronous and page mode interface

 Dual voltage rails for optional performance

 VDD 2.7V~3.6V, VDDQ 2.7V~3.6V

 Page mode read access

 Interpage Read access : 70ns

 Intrapage Read access : 20ns

 Low Power Consumption

 Low Power Feature

 Temperature Controlled Refresh

 Partial Array Refresh

 Deep power-down (DPD) mode

 Operating temperature Range

Industrial -40°C~85°C

 Packages:

48-ball TFBGA, 48-pin TSOP-I

 Asynchronous Operation < 30 mA

 Intrapage Read < 18mA

 Standby < 180 uA (max.)

 Deep power-down (DPD) < 3uA (Typ)

Notes:

1. The 48-pin TSOP-I package option is not yet available. Please contact SRAM Marketing at sram@issi.com

for additional information.

products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services

described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information

and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or

malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or

effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to

its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

www.issi.com - SRAM@issi.com

Rev.A | May 2011

12 3 4 5 6 7...30

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与IS66WVE4M16BLL-70BLI相关器件

型号	品牌	获取价格	描述	数据表
IS66WVE4M16BLL-70BLI-TR	ISSI	获取价格	IC PSRAM 64M PARALLEL 48TFBGA
IS66WVE4M16CLL	ISSI	获取价格	Asynchronous and page mode interface
IS66WVE4M16EALL	ISSI	获取价格	Asynchronous and page mode interface
IS66WVE4M16EALL-70BLI	ISSI	获取价格	Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48
IS66WVE4M16EBLL-55BLI	ISSI	获取价格	Pseudo Static RAM, 4MX16, 55ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48
IS66WVE4M16EBLL-55BLI-TR	ISSI	获取价格	IC PSRAM 64MBIT 55NS 48BGA
IS66WVE4M16EBLL-70BLI	ISSI	获取价格	Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48
IS66WVE4M16EBLL-70BLI-TR	ISSI	获取价格	Pseudo Static RAM,
IS66WVE4M16ECLL-70BLI	ISSI	获取价格	Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48
IS66WVE4M16TALL-70BLI	ISSI	获取价格	Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48

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