Datasheet > IS61WV51216EDBLL

IS61WV51216EDBLL

更新时间： 2024-11-13 01:23:43

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
19页	921K
描述
TTL compatible inputs and outputs

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中文翻译

获取价格

数据手册

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IS61WV51216EDBLL 数据手册

IS61WV51216EDALL

IS61/64WV51216EDBLL

512K x 16 HIGH-SPEED ASYNCHRONOUS

CMOS STATIC RAM WITH ECC

FEBRUARY 2013

FEATURES

DESCRIPTION

•ꢀ High-speedꢀaccessꢀtimes:ꢀ8,ꢀ10,ꢀ20ꢀns

•ꢀ High-performance,ꢀlow-powerꢀCMOSꢀprocess

•ꢀ Multipleꢀcenterꢀpowerꢀandꢀgroundꢀpinsꢀforꢀgreaterꢀ

noise immunity

•ꢀ Easy memory expansion with CE and OE options

•ꢀ CE power-down

TheꢀISSIꢀꢀIS61WV51216EDALLꢀandꢀ

IS61/64WV51216EDBLLꢀareꢀhigh-speed,ꢀ8M-bitꢀstaticꢀ

RAMsꢀorganizedꢀasꢀ512Kꢀwordsꢀbyꢀ16ꢀbits.ꢀItꢀisꢀfabri-

cated using ISSI'sꢀhigh-performanceꢀCMOSꢀtechnology.ꢀ

Thisꢀhighlyꢀreliableꢀprocessꢀcoupledꢀwithꢀinnovativeꢀ

circuit design techniques, yields high-performance and

low power consumption devices.

•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefreshꢀ

When CEꢀisꢀHIGHꢀ(deselected),ꢀtheꢀdeviceꢀassumesꢀ

a standby mode at which the power dissipation can be

reducedꢀdownꢀwithꢀCMOSꢀinputꢀlevels.

required

•ꢀ TTLꢀcompatibleꢀinputsꢀandꢀoutputs

•ꢀ SingleꢀPowerꢀSupply

– Vddꢀ=ꢀ1.65Vꢀtoꢀ2.2Vꢀ(IS61WV51216EDALL)

– Vddꢀ=ꢀ2.4Vꢀtoꢀ3.6Vꢀ(IS61/64WV51216EDBLL)

•ꢀ Packagesꢀavailable:

Easy memory expansion is provided by using Chip En-

ableꢀandꢀOutputꢀEnableꢀinputs,ꢀCE and OE.ꢀTheꢀactiveꢀ

LOWꢀWriteꢀEnableꢀ(WE) controls both writing and read-

ing of the memory. A data byte allows Upper Byte (UB)

andꢀLowerꢀByteꢀ(LB) access.

–

ꢀ48-ballꢀminiBGAꢀꢀ(6mmꢀxꢀ8mm)

ꢀ –ꢀꢀ44-pinꢀTSOPꢀ(TypeꢀII)ꢀ

•ꢀ IndustrialꢀandꢀAutomotiveꢀTemperatureꢀSupport

•ꢀ Lead-freeꢀavailable

•ꢀ Dataꢀcontrolꢀforꢀupperꢀandꢀlowerꢀbytes

TheꢀdeviceꢀisꢀpackagedꢀinꢀtheꢀJEDECꢀstandardꢀ44-pinꢀ

TSOPꢀTypeꢀIIꢀandꢀ48-pinꢀMiniꢀBGAꢀ(6mmꢀxꢀ8mm).

FUNCTIONAL BLOCK DIAGRAM

Memory

Lower IO

Array-

Memory

Upper IO

Array-

A0-A18

ECC

Array-

512K

ECC

Array-

512K

Decoder

512Kx8

IO0-7

ECC

I/O Data

Circuit

Column I/O

IO8-15

/CE

/OE

/WE

/UB

/LB

Control

Circuit

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-

est version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-

ably be expected to cause failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such applications

unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com

Rev. A

02/20/2013

12 3 4 5 6 7...19

中文翻译

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与IS61WV51216EDBLL相关器件

型号	品牌	获取价格	描述	数据表
IS61WV51216EDBLL-8TLI	ISSI	获取价格	Standard SRAM, 512KX16, 8ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44
IS61WV51232ALL	ISSI	获取价格	512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61WV51232ALL-20BI	ISSI	获取价格	512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61WV51232ALL-20BLI	ISSI	获取价格	Standard SRAM, 512KX32, 20ns, CMOS, PBGA90, MINIBGA-90
IS61WV51232ALS	ISSI	获取价格	512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61WV51232BLL	ISSI	获取价格	512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61WV51232BLL-10BI	ISSI	获取价格	512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61WV51232BLL-10BLI	ISSI	获取价格	512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61WV51232BLS	ISSI	获取价格	512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61WV5128ALL	ISSI	获取价格	512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

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