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IS61WV5128BLL-10TI PDF预览

IS61WV5128BLL-10TI

更新时间: 2024-09-18 12:08:39
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
26页 586K
描述
512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

IS61WV5128BLL-10TI 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP2
包装说明:PLASTIC, TSOP2-44针数:44
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.59
Is Samacsys:N最长访问时间:10 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G44
JESD-609代码:e0长度:18.41 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:44
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP44,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:1.8/2 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.008 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.045 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.4 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

IS61WV5128BLL-10TI 数据手册

 浏览型号IS61WV5128BLL-10TI的Datasheet PDF文件第2页浏览型号IS61WV5128BLL-10TI的Datasheet PDF文件第3页浏览型号IS61WV5128BLL-10TI的Datasheet PDF文件第4页浏览型号IS61WV5128BLL-10TI的Datasheet PDF文件第5页浏览型号IS61WV5128BLL-10TI的Datasheet PDF文件第6页浏览型号IS61WV5128BLL-10TI的Datasheet PDF文件第7页 
IS61WV5128ALL/ALS  
IS61WV5128BLL/BLS  
IS64WV5128BLL/BLS  
512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM  
AUGUST 2009  
FEATURES  
DESCRIPTION  
HIGH SPEED: (IS61/64WV5128ALL/BLL)  
•ꢀ High-speedꢀaccessꢀtime:ꢀ8,ꢀ10,ꢀ20ꢀns  
•ꢀ LowꢀActiveꢀPower:ꢀ85ꢀmWꢀ(typical)  
The ISSI IS61WV5128Axx and IS61/64WV5128Bxx  
are very high-speed, low power, 524,288-word by  
8-bit CMOS static RAMs. The IS61WV5128Axx and  
IS61/64WV5128Bxx are fabricated using ISSI's high-  
performance CMOS technology.This highly reliable pro-  
cess coupled with innovative circuit design techniques,  
yields higher performance and low power consumption  
devices.  
•ꢀ Lowꢀstand-byꢀpower:ꢀ7ꢀmWꢀ(typical)  
CMOS standby  
LOW POWER: (IS61/64WV5128ALS/BLS)  
•ꢀ High-speedꢀaccessꢀtime:ꢀ25,ꢀ35ꢀns  
•ꢀ LowꢀActiveꢀPower:ꢀ35ꢀmWꢀ(typical)  
When CE is HIGH (deselected), the device assumes  
a standby mode at which the power dissipation can be  
reduced down with CMOS input levels.  
•ꢀ Lowꢀstand-byꢀpower:ꢀ0.6ꢀmWꢀ(typical)  
CMOS standby  
The IS61WV5128Axx and IS61/64WV5128Bxx operate  
from a single power supply.  
•ꢀ Singleꢀpowerꢀsupply  
— Vd d 1.65V to 2.2V (IS61WV5128Axx)  
— Vd d 2.4V to 3.6V (IS61/64WV5128Bxx)  
TheIS61WV5128ALLandIS61/64WV5128BLLareavail-  
able in 36-pin 400-mil SOJ, 36-pin mini BGA, and 44-pin  
TSOP (Type II) packages.  
•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefreshꢀ  
required  
The IS61WV5128ALS and IS61/64WV5128BLS are  
available in 32-pinTSOP (Type I), 32-pin sTSOP (Type I),  
32-pin SOP and 32-pin TSOP (Type II) packages.  
•ꢀ Threeꢀstateꢀoutputs  
•ꢀ IndustrialꢀandꢀAutomotiveꢀtemperatureꢀsupport  
•ꢀ Lead-freeꢀavailable  
FUNCTIONAL BLOCK DIAGRAM  
512K X 8  
MEMORY ARRAY  
A0-A18  
DECODER  
VDD  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE  
CONTROL  
CIRCUIT  
OE  
WE  
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without  
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-  
est version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com  
1
Rev. I  
08/10/09  

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