Datasheet > IS61WV5128BLL-10TLI-TR

IS61WV5128BLL-10TLI-TR

更新时间： 2024-09-18 22:59:15

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器
页数	文件大小	规格书
25页	545K
描述
IC SRAM 4M PARALLEL 44TSOP II

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中文翻译

获取价格

数据手册
替代型号

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IS61WV5128ALL/ALS

IS61WV5128BLL/BLS

IS64WV5128BLL/BLS

512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

AUGUST 2009

FEATURES

DESCRIPTION

HIGH SPEED: (IS61/64WV5128ALL/BLL)

•ꢀ High-speedꢀaccessꢀtime:ꢀ8,ꢀ10,ꢀ20ꢀns

•ꢀ LowꢀActiveꢀPower:ꢀ85ꢀmWꢀ(typical)

The ISSI IS61WV5128Axx and IS61/64WV5128Bxx

are very high-speed, low power, 524,288-word by

8-bit CMOS static RAMs. The IS61WV5128Axx and

IS61/64WV5128Bxx are fabricated using ISSI's high-

performance CMOS technology.This highly reliable pro-

cess coupled with innovative circuit design techniques,

yields higher performance and low power consumption

devices.

•ꢀ Lowꢀstand-byꢀpower:ꢀ7ꢀmWꢀ(typical)

CMOS standby

LOW POWER: (IS61/64WV5128ALS/BLS)

•ꢀ High-speedꢀaccessꢀtime:ꢀ25,ꢀ35ꢀns

•ꢀ LowꢀActiveꢀPower:ꢀ35ꢀmWꢀ(typical)

When CE is HIGH (deselected), the device assumes

a standby mode at which the power dissipation can be

reduced down with CMOS input levels.

•ꢀ Lowꢀstand-byꢀpower:ꢀ0.6ꢀmWꢀ(typical)

CMOS standby

The IS61WV5128Axx and IS61/64WV5128Bxx operate

from a single power supply.

•ꢀ Singleꢀpowerꢀsupply

— V^{d d}1.65V to 2.2V (IS61WV5128Axx)

— V^{d d}2.4V to 3.6V (IS61/64WV5128Bxx)

TheIS61WV5128ALLandIS61/64WV5128BLLareavail-

able in 36-pin 400-mil SOJ, 36-pin mini BGA, and 44-pin

TSOP (Type II) packages.

•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefreshꢀ

required

The IS61WV5128ALS and IS61/64WV5128BLS are

available in 32-pinTSOP (Type I), 32-pin sTSOP (Type I),

32-pin SOP and 32-pin TSOP (Type II) packages.

•ꢀ Threeꢀstateꢀoutputs

•ꢀ IndustrialꢀandꢀAutomotiveꢀtemperatureꢀsupport

•ꢀ Lead-freeꢀavailable

FUNCTIONAL BLOCK DIAGRAM

512K X 8

MEMORY ARRAY

A0-A18

DECODER

VDD

GND

I/O

DATA

COLUMN I/O

I/O0-I/O7

CIRCUIT

CONTROL

CIRCUIT

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-

est version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com

Rev. I

08/10/09

12 3 4 5 6 7...25

中文翻译

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IS61WV5128BLL-10TLI-TR 替代型号

型号	品牌	替代类型	描述	数据表
IS61WV5128BLL-10TLI	ISSI	完全替代	512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

与IS61WV5128BLL-10TLI-TR相关器件

型号	品牌	获取价格	描述	数据表
IS61WV5128BLS-25TLI	ISSI	获取价格	IC SRAM 4M PARALLEL 44TSOP2
IS61WV5128EDBLL	ISSI	获取价格	512K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV5128EDBLL-10BI	ISSI	获取价格	512K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV5128EDBLL-10BLI	ISSI	获取价格	512K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV5128EDBLL-10BLI-TR	ISSI	获取价格	IC SRAM 4M PARALLEL 36TFBGA
IS61WV5128EDBLL-10KLI	ISSI	获取价格	512K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV5128EDBLL-10KLI-TR	ISSI	获取价格	IC SRAM 4M PARALLEL 36SOJ
IS61WV5128EDBLL-10TI	ISSI	获取价格	512K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV5128EDBLL-10TLI	ISSI	获取价格	512K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV5128EDBLL-10TLI-TR	ISSI	获取价格	IC SRAM 4M PARALLEL 44TSOP2

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