Datasheet > IS61WV51232ALL

IS61WV51232ALL

更新时间： 2024-09-24 12:04:03

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
19页	177K
描述
512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

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中文翻译

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IS61WV51232ALL 数据手册

IS61WV51232ALL/ALS

IS61WV51232BLL/BLS

IS64WV51232BLL/BLS

512K x 32 HIGH-SPEED ASYNCHRONOUS

CMOS STATIC RAM WITH 3.3V SUPPLY

PRELIMINARYINFORMATION

APRIL2008

FEATURES

• High-speed access times:

8, 10, 20 ns

• High-performance, low-power CMOS process

• Multiple center power and ground pins for greater

noise immunity

DESCRIPTION

The ISSI IS61WV51232Axx/Bxx and IS64WV51232Bxx

are high-speed, 16M-bit static RAMs organized as 512K

words by 32 bits. It is fabricated using ISSI's high-perform-

anceCMOStechnology.Thishighlyreliableprocesscoupled

withinnovativecircuitdesigntechniques,yieldshigh-perfor-

mance and low power consumption devices.

• Easy memory expansion with CE and OE op-

tions

• CE power-down

• Fully static operation: no clock or refresh

required

When CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs, CE and OE. The active LOW

Write Enable (WE) controls both writing and reading of the

memory.

• TTL compatible inputs and outputs

• Single power supply

V^DD1.65V to 2.2V (IS61WV51232Axx)

speed = 20ns for V^DD1.65V to 2.2V

V^DD2.4V to 3.6V (IS61/64WV51232Bxx)

speed = 10ns for V^DD2.4V to 3.6V

speed = 8ns for V^DD3.3V + 5%

• Packages available:

ThedeviceispackagedintheJEDECstandard90-ball BGA

(8mm x 13mm).

–

90-ball miniBGA (8mm x 13mm)

• Industrial and Automotive Temperature Support

• Lead-free available

FUNCTIONAL BLOCK DIAGRAM

512K x 32

MEMORY ARRAY

A0-A18

DECODER

VDD

VSS

DQa-d

I/O

COLUMN I/O

DATA

CIRCUIT

CONTROL

CIRCUIT

BWa-d

CE2

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com

Rev. 00B

04/23/08

12 3 4 5 6 7...19

中文翻译

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与IS61WV51232ALL相关器件

型号	品牌	获取价格	描述	数据表
IS61WV51232ALL-20BI	ISSI	获取价格	512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61WV51232ALL-20BLI	ISSI	获取价格	Standard SRAM, 512KX32, 20ns, CMOS, PBGA90, MINIBGA-90
IS61WV51232ALS	ISSI	获取价格	512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61WV51232BLL	ISSI	获取价格	512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61WV51232BLL-10BI	ISSI	获取价格	512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61WV51232BLL-10BLI	ISSI	获取价格	512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61WV51232BLS	ISSI	获取价格	512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61WV5128ALL	ISSI	获取价格	512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV5128ALL/ALS	ISSI	获取价格	512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV5128ALL-20BI	ISSI	获取价格	512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

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