5秒后页面跳转
IS61C6416AL-12KLI-T PDF预览

IS61C6416AL-12KLI-T

更新时间: 2024-11-20 19:05:59
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
17页 91K
描述
Standard SRAM, 64KX16, 12ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, PLASTIC, MS-027, SOJ-44

IS61C6416AL-12KLI-T 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOJ包装说明:SOJ,
针数:44Reach Compliance Code:compliant
风险等级:5.78最长访问时间:12 ns
JESD-30 代码:R-PDSO-J44长度:28.575 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:44字数:65536 words
字数代码:64000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:64KX16封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED座面最大高度:3.75 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

IS61C6416AL-12KLI-T 数据手册

 浏览型号IS61C6416AL-12KLI-T的Datasheet PDF文件第2页浏览型号IS61C6416AL-12KLI-T的Datasheet PDF文件第3页浏览型号IS61C6416AL-12KLI-T的Datasheet PDF文件第4页浏览型号IS61C6416AL-12KLI-T的Datasheet PDF文件第5页浏览型号IS61C6416AL-12KLI-T的Datasheet PDF文件第6页浏览型号IS61C6416AL-12KLI-T的Datasheet PDF文件第7页 
®
IS61C6416AL IS64C6416AL  
IS62C6416AL IS65C6416AL  
ISSI  
64K x 16 HIGH-SPEED CMOS STATIC RAM  
JUNE2005  
FEATURES  
DESCRIPTION  
The ISSIIS61C6416AL, IS62C6416AL, IS64C6416AL and  
IS65C6416AL are high-speed, 1,048,576-bit static RAMs  
organized as 65,536 words by 16 bits. They are fabricated  
usingISSI'shigh-performanceCMOStechnology.Thishighly  
reliable process coupled with innovative circuit design tech-  
niques, yields access times as fast as 12 ns with low power  
consumption.  
IS61C6416AL and IS64C6416AL  
• High-speed access time: 12 ns, 15ns  
• Low Active Power: 175 mW (typical)  
• Low Standby Power: 1 mW (typical)  
CMOS standby  
IS62C6416AL and IS65C6416AL  
When CE is HIGH (deselected), the device assumes a  
standbymodeatwhichthepowerdissipationcanbereduced  
down with CMOS input levels.  
• High-speed access time: 35 ns, 45ns  
• Low Active Power: 50 mW (typical)  
• Low Standby Power: 100 µW (typical)  
CMOS standby  
Easy memory expansion is provided by using Chip Enable  
andOutputEnableinputs,CEandOE.TheactiveLOWWrite  
Enable(WE)controlsbothwritingandreadingofthememory.  
A data byte allows Upper Byte (UB) and Lower Byte (LB)  
access.  
• TTL compatible interface levels  
• Single 5V ± 10% power supply  
• Fully static operation: no clock or refresh  
required  
The IS61C6416AL, IS62C6416AL, IS64C6416AL and  
IS65C6416AL are packaged in the JEDEC standard 44-pin  
400-mil SOJ and 44-pin TSOP (Type II).  
• Available in 44-pin SOJ package and  
44-pin TSOP (Type II)  
• Commercial, Industrial and Automotive tempera-  
ture ranges available  
• Lead-free available  
FUNCTIONAL BLOCK DIAGRAM  
64K x 16  
MEMORY ARRAY  
A0-A15  
DECODER  
VDD  
GND  
I/O0-I/O7  
Lower Byte  
I/O  
DATA  
COLUMN I/O  
CIRCUIT  
I/O8-I/O15  
Upper Byte  
CE  
OE  
WE  
CONTROL  
CIRCUIT  
UB  
LB  
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability  
arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany  
publishedinformationandbeforeplacingordersforproducts.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. B  
1
06/08/05  

与IS61C6416AL-12KLI-T相关器件

型号 品牌 获取价格 描述 数据表
IS61C6416AL-12KLI-TR ISSI

获取价格

IC SRAM 1M PARALLEL 44SOJ
IS61C6416AL-12T ISSI

获取价格

64K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C6416AL-12TI ISSI

获取价格

64K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C6416AL-12TI-TR ISSI

获取价格

IC SRAM 1M PARALLEL 44TSOP II
IS61C6416AL-12TLI ISSI

获取价格

64K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C64AH ICSI

获取价格

8K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C64AH-12J ETC

获取价格

x8 SRAM
IS61C64AH-12JI ISSI

获取价格

Standard SRAM, 8KX8, 12ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28
IS61C64AH-12N ETC

获取价格

x8 SRAM
IS61C64AH-12NI ISSI

获取价格

Standard SRAM, 8KX8, 12ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28