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IS42S16320D-7TL

更新时间： 2024-11-06 19:45:19
品牌 Logo 应用领域
美国芯成 - ISSI 时钟动态存储器光电二极管内存集成电路
页数 文件大小 规格书
66页 1311K
描述
Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSSOP2, 54 PIN

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IS42S16320D-7TL 技术参数

是否Rohs认证： 符合生命周期：Not Recommended
零件包装代码：TSSOP包装说明：0.400 INCH, LEAD FREE, TSSOP2, 54 PIN
针数：54Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.32.00.28
Factory Lead Time：6 weeks风险等级：7.2
访问模式：FOUR BANK PAGE BURST最长访问时间：5.4 ns
其他特性：AUTO/SELF REFRESH最大时钟频率 (fCLK)：143 MHz
I/O 类型：COMMON交错的突发长度：1,2,4,8
JESD-30 代码：R-PDSO-G54长度：22.22 mm
内存密度：536870912 bit内存集成电路类型：SYNCHRONOUS DRAM
内存宽度：16功能数量：1
端口数量：1端子数量：54
字数：33554432 words字数代码：32000000
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：32MX16
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：TSOP2封装等效代码：TSOP54,.46,32
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
电源：3.3 V认证状态：Not Qualified
刷新周期：8192座面最大高度：1.2 mm
自我刷新：YES连续突发长度：1,2,4,8,FP
最大待机电流：0.004 A子类别：DRAMs
最大压摆率：0.22 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：3 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子形式：GULL WING
端子节距：0.8 mm端子位置：DUAL
宽度：10.16 mmBase Number Matches：1

IS42S16320D-7TL 数据手册

 浏览型号IS42S16320D-7TL的Datasheet PDF文件第2页浏览型号IS42S16320D-7TL的Datasheet PDF文件第3页浏览型号IS42S16320D-7TL的Datasheet PDF文件第4页浏览型号IS42S16320D-7TL的Datasheet PDF文件第5页浏览型号IS42S16320D-7TL的Datasheet PDF文件第6页浏览型号IS42S16320D-7TL的Datasheet PDF文件第7页 
IS42/45R86400D/16320D/32160D  
IS42/45S86400D/16320D/32160D  
16Mx32, 32Mx16, 64Mx8  
MAY 2015  
512Mb SDRAM  
DEvICE OvERvIEW  
ISSI's 512Mb Synchronous DRAM achieves high-speed  
data transfer using pipeline architecture. All inputs and  
outputs signals refer to the rising edge of the clock input.  
Theꢀ512MbꢀSDRAMꢀisꢀorganizedꢀasꢀfollows.ꢀ  
FEATURES  
•ꢀ Clock frequency: 200, 166, 143 MHz  
•ꢀ Fullyꢀsynchronous;ꢀallꢀsignalsꢀreferencedꢀtoꢀaꢀ  
positive clock edge  
PACKAGE INFORMATION  
IS42/45S32160D IS42/45S16320D IS42/45S86400D  
•ꢀ Internalꢀbankꢀforꢀhidingꢀrowꢀaccess/precharge  
•ꢀ Powerꢀsupply:ꢀVdd/Vddq = 2.3V-3.6V  
ꢀ IS42/45SxxxxxDꢀ-ꢀVdd/Vddq = 3.3Vꢀ  
ꢀ IS42/45RxxxxxDꢀ-ꢀVdd/Vddq = 2.5  
•ꢀ LVTTLꢀinterface  
IS42/45R32160D IS42/45R16320D IS42/45R86400D  
4M x 32 x 4  
banks  
8M x 16 x 4  
banks  
16M x 8 x 4  
banks  
90-ballꢀTF-BGA  
54-pinꢀTSOP-II  
54-ballꢀTF-BGA  
54-pinꢀTSOP-II  
•ꢀ Programmableꢀburstꢀlengthꢀ  
– (1, 2, 4, 8, full page)  
KEY TIMING PARAMETERS  
•ꢀ Programmableꢀburstꢀsequence:ꢀ  
Sequential/Interleave  
Parameter  
-5  
-6  
-7  
Unit  
•ꢀ AutoꢀRefreshꢀ(CBR)  
•ꢀ SelfꢀRefresh  
•ꢀ 8Kꢀrefreshꢀcyclesꢀeveryꢀ64ꢀms  
•ꢀ Randomꢀcolumnꢀaddressꢀeveryꢀclockꢀcycle  
•ꢀ ProgrammableꢀCAS latency (2, 3 clocks)  
ClkꢀCycleꢀTimeꢀ  
CASꢀLatencyꢀ=ꢀ3ꢀ  
CASꢀLatencyꢀ=ꢀ2ꢀ  
ꢀꢀ  
5ꢀ  
10ꢀ  
ꢀ
6ꢀ  
10ꢀ  
ꢀ
7ꢀ  
7.5ꢀ  
ꢀ
nsꢀ  
ns  
ClkꢀFrequencyꢀ  
CASꢀLatencyꢀ=ꢀ3ꢀ  
CASꢀLatencyꢀ=ꢀ2ꢀ  
ꢀꢀ  
200ꢀ  
100ꢀ  
ꢀ
ꢀ
ꢀ
167ꢀ  
100ꢀ  
143ꢀ  
133ꢀ  
Mhzꢀ  
Mhz  
AccessꢀTimeꢀꢀfromꢀClockꢀ  
CASꢀLatencyꢀ=ꢀ3ꢀ  
CASꢀLatencyꢀ=ꢀ2ꢀ  
ꢀ
ꢀ
ꢀ
ꢀ
•ꢀ Burstꢀread/writeꢀandꢀburstꢀread/singleꢀwriteꢀ  
5.0ꢀ  
6ꢀ  
5.4ꢀ  
6ꢀ  
5.4ꢀ  
5.4  
nsꢀ  
ns  
operations capability  
•ꢀ Burstꢀterminationꢀbyꢀburstꢀstopꢀandꢀprechargeꢀ  
command  
ADDRESS TABLE  
•ꢀ Packages:ꢀ  
x8/x16:ꢀ54-pinꢀTSOP-II,ꢀ54-ballꢀTF-BGAꢀ(x16ꢀonly)  
x32:ꢀ90-ballꢀTF-BGA  
Parameter  
16M x 32  
32M x 16  
64M x 8  
16M x 8 x 4  
banks  
Configuration 4M x 32 x 4  
8M x 16 x 4  
banks  
banks  
Bank Address BA0, BA1  
Pins  
•ꢀ TemperatureꢀRange:  
Commercial (0oC to +70oC)  
Industrial (-40oC to +85oC)  
Automotive, A1 (-40oC to +85oC)  
BA0, BA1  
BA0, BA1  
Autoprecharge A10/AP  
Pins  
A10/AP  
A10/AP  
Automotive, A2 (-40oC to +105oC)  
Row Address 8K(A0ꢀ–ꢀA12) 8K(A0ꢀ–ꢀA12) 8K(A0ꢀ–ꢀA12)  
Column  
512(A0 – A8) 1K(A0ꢀ–ꢀA9)  
2K(A0ꢀ–ꢀA9,ꢀ  
Address  
A11)  
Refresh Count  
Com./Ind./A1 8Kꢀ/ꢀ64ms  
A2 8Kꢀ/ꢀ16ms  
8Kꢀ/ꢀ64ms  
8Kꢀ/ꢀ16ms  
8Kꢀ/ꢀ64ms  
8Kꢀ/ꢀ16ms  
Copyright © 2015 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time with-  
out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain  
the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can  
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such ap-  
plications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:  
a.) the risk of injury or damage has been minimized;  
b.) the user assume all such risks; and  
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances  
Integrated Silicon Solution, Inc. — www.issi.com  
1
Rev. B  
05/12/2015  
1234567...66

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IS42S16320D-7TL 替代型号

型号 品牌 替代类型 描述 数据表
IS42S16320D-7TL-TR ISSI

完全替代

 IC DRAM 512M PARALLEL 54TSOP
IS42S16320B-7TL-TR ISSI

完全替代

 Synchronous DRAM, 32MX16, 6ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT, TSOP2-54
IS45S16320B-7TLA1 ISSI

完全替代

 64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

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IS42S16320F-6BL-TR ISSI

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IS42S16320F-6TL ISSI

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IS42S16320F-6TLI ISSI

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IS42S16320F-6TLI-TR ISSI

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IS42S16320F-6TL-TR ISSI

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