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IS42S16400-8T PDF预览

IS42S16400-8T

更新时间: 2024-09-16 06:37:15
品牌 Logo 应用领域
美国芯成 - ISSI 动态存储器光电二极管
页数 文件大小 规格书
68页 1495K
描述
Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54,

IS42S16400-8T 数据手册

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IS42S8800/IS42S8800L  
IS42S16400/IS42S16400L  
2(1)M Words x 8(16) Bits x 4 Banks (64-MBIT)  
SYNCHRONOUS DYNAMIC RAM  
FEATURES  
DESCRIPTION  
The IS42S8800 and IS42S16400 are high-speed 67,  
108,864-bit synchronous dynamic random-access  
moeories, organized as 2,097,152 x 8 x 4 and 1,048,  
576 x 16 x 4 (word x bit x bank), respectively.  
• Single 3.3V (± 0.3V) power supply  
• High speed clock cycle time -7: 133MHz<3-3-3>,  
-8: 100MHz<2-2-2>  
• Fully synchronous operation referenced to clock  
rising edge  
The synchronous DRAMs achieved high-speed data  
transfer using the pipeline architecture and clock  
frequency up to 133MHz for -7. All input and outputs  
are synchronized with the postive edge of the clock.  
The synchronous DRAMs are compatible with Low  
Voltage TTL (LVTTL).These products are pack-aged  
in 54-pin TSOP-2.  
• Possible to assert random column access in  
every cycle  
• Quad internal banks contorlled by A12 & A13  
(Bank Select)  
• Byte control by LDQM and UDQM for  
IS42S16400  
• Programmable Wrap sequence (Sequential /  
Interleave)  
• Programmable burst length (1, 2, 4, 8 and full  
page)  
• Programmable /CAS latency (2 and 3)  
• Automatic precharge and controlled precharge  
• CBR (Auto) refresh and self refresh  
• X8, X16 organization  
• LVTTL compatible inputs and outputs  
• 4,096 refresh cycles / 64ms  
• Burst termination by Burst stop and Precharge  
command  
• Package 400mil 54-pin TSOP-2  
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors  
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.  
Integrated Circuit Solution Inc.  
DR007-0A  
1

与IS42S16400-8T相关器件

型号 品牌 获取价格 描述 数据表
IS42S16400A ISSI

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1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400A-10T ISSI

获取价格

Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54
IS42S16400A-10TI ISSI

获取价格

Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54
IS42S16400A-10TLI ISSI

获取价格

Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
IS42S16400A-6T ISSI

获取价格

Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54
IS42S16400A-6TL ISSI

获取价格

Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
IS42S16400A-7T ISSI

获取价格

Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54
IS42S16400A-7TI ISSI

获取价格

Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54
IS42S16400A-7TL ISSI

获取价格

Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
IS42S16400A-7TLI ISSI

获取价格

Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54